閘氧化層的微縮化是目前高效能金氧半場效電晶體製造技術的趨勢。在微縮化的過程中，觀察到一個漸進式的崩潰現象，使得氧化層的漏電流呈現出階梯狀的上升，此現象稱之為多重軟崩潰。所以閘氧化層微縮化的進展將被多重軟崩潰現象所侷限，是否能在產品操作生命期之內容許元件遭受多重軟崩潰的發生，已成為目前非常重要的一個研究課題。
互補式金氧半反向器在數位電路上是最基本的組成元件。因此在本篇論文中，首先討論多重軟崩潰對互補式金氧半反向器特性上影響，然後利用實驗上的量測數據，將此崩潰特性模型化；藉由模擬方式，以邏輯閘電路，互補式金氧半環形震盪器為例，評估多重軟崩潰對電路功能上所造成的影響。

The scaling of gate oxide leads to fabrication of high performance MOSFETs. When oxide scaling, however, a progressive breakdown phenomenon has been observed. This progressive breakdown event produces a stepping increase of oxide leakage current. This phenomenon is often refers to as Multi-SBD (Multiple Soft Breakdown). Therefore, gate oxide scaling can be limited by Multi-SBD occurring during device operation lifetime. Hence, it is essential to study the impact of multiple on soft breakdown.
CMOS inverter is the most basic element of digital circuits. In this work, the impact of CMOS inverter by Multi-SBD has been investigated. The breakdown modeling proposed based on the physical measurement data can be used for determining how strongly gate oxide soft breakdown affects circuit operation. Such assessment is completed by simulation study on a CMOS ring oscillator operation after Multi-SBD occurs in the circuit.

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