中文摘要
在本篇論文當中，我們利用成長在矽基板上的氮化鎵/氮化鋁鎵試片製作高電子遷移率電晶體，實驗的方向分為兩個主軸。不同的磊晶層結構的影響以及不同格離方式對崩潰的關係。
首先是不同的基板磊晶方式，將一樣的製程應用在不同磊晶層的試片上，總共使用三種系列的試片，(1) 使用低阻基板且總磊晶層厚度約為4.8-μm，(2) 同樣使用低阻基板但是磊晶層加厚到5.8-μm，期望可以得到更高的崩潰電壓，(3) 使用高阻基板但是磊晶層指有2.6-μm，原訂是設計給高頻元件使用的。在一般電性方面，確實是受到試片的二微電子氣濃度以及電子遷移率的大小所主導，試片(3)擁有最低的片電阻故得到最高的飽和電流密度以及最低的導通電阻，試片(2)的崩潰電壓可以達到2730V，發生在Lgd = 40-μm或60-μm的元件，在量測時基板接地並且浸泡在冷卻液中，最高的BFOM發生在試片(1)Lgd = 20-μm的元件達到900MW/cm2，因為在崩潰電壓以及導通電阻達到最加的平衡
第二個主軸是不同的隔離方式對逆向特性的影響，選用鋅離子佈植、氧離子佈植還有使用mesa的結構。，實驗結果使用氧離子佈植區域的片電阻最高達到7.57×1012 Ω/⃞，mesa的則是最低只有1.48×109 Ω/⃞，在調變溫的量測下，mesa的活化能是最低的只有0.391 eV，表示mesa是最安定的絕緣方式，在高壓量測時，當Vd = 1kV, Vg = -5V，mesa會有較大的漏電流密度6.33×10-4 mA/mm，當硬性崩潰時的電壓則差不多，在低壓的狀態下，接觸到側壁的元件會有較大的漏電流密度，當逆偏壓再上升時漏電曲線會與其他的對照組相符。

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