本篇論文所研究的功率元件為橫向式的DMOSFET，其優點在於可以整合在平面製程上。因為傳統的LDMOSFET具有高導通電阻和大面積的缺點，本篇論文採用最近提出的新方法來設計元件—Trench LDMOSFET，利用此結構可以有效降低導通電阻以及減少元件面積。
本篇論文的設計目標是要能應用在PDP驅動電路，期望設計出一顆應用在PDP中的200V功率元件。利用Tsuprem4和Medici等模擬軟體，分別模擬Trench LDMOSFET和RESURF LDMOS的結構和電性，最後再來討論比較。

The power device in this thesis is Lateral DMOSFET (Double-diffusion MOSFET), and it’s easily to integrated into planar process. Because conventional LDMOSFET has shortages of large on-resistance and cell pitch , we choose Trench LDMOSFET that is recently introduced to improve these characteristics.
The subject for this thesis would be the design of a 200V power devices,it could be applied to PDP(Plasma Display Panel) driver IC.In this work We use simulation tools like Tsuprem4 and Medici to simulate the electric characteristics of Trench LDMOSFET and RESURF LDMOSFET. Finally,the results of simulation are discussed.

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