有機主動式矩陣顯示器具有高對比、高亮度、低操作電壓、可撓曲性等優點，但常常會有亮度不均的問題；故本論文提出兩種光回授的方式解決：第一種是在主動式矩陣顯示器中，利用光敏電阻的特性調整發光二極體的亮度；第二種是將主動式驅動電路中的驅動電晶體加入非揮發性記憶體，利用照光改變電晶體的臨界電壓，進而使發光二極體亮度均勻。
在第一種使用光敏電阻的方式中，不僅可以調整發光二極體的亮度，同時也提高發光二極體的開關比；而在第二種加入非揮發性記憶體的方式中，照光後的臨界電壓皆比未照光的大，且非揮發性記憶體的臨界電壓隨光強度增加而增加，臨界電壓的偏移比率也有超過10％；同時我們發現，照光在源極比在汲極的臨界電壓偏移量更大，且此構想能在短通道與長通道中實現。

Active matrix organic light- emitting displays have many advantages, such as high contrast ratio, high brightness, low operation voltage, and flexibility; however, nonuniform brightness problem, or MURA, has to be solved. We propose two solutions to this problem. Firstly, we use photo-sensitive resistor to change the brightness of LED. Secondly, the function of non-volatile memory is added to one of the two transistors in the driving circuit. We use light to change the threshold voltage of the transistor and adjust the brightness.
In the first scheme, we not only improve the uniformity of brightness but also increase the on/off ratio of LED. In the second scheme, the threshold voltage increases upon illumination. The shift in threshold voltage of non-volatile memory increases with the intensity of light. We discover that illumination in the source region of the transistor results in more threshold voltage shift than in the drain region. The scheme works in both short-channel and long-channel non-volatile memory transistor.

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