研究生: |
黃家津 Huang, Chia-Chin |
---|---|
論文名稱: |
具光照度過濾效果且應用於二值化影像處理之CMOS影像感測器元件 A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application |
指導教授: |
金雅琴
King, Ya-Chin |
口試委員: |
林崇榮
施教仁 |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 中文 |
論文頁數: | 60 |
中文關鍵詞: | 影像感測器 |
相關次數: | 點閱:3 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
隨著消費者對於高科技產品的需求越來越高,在影像或是動畫的處理上也預期可以擁有更理想的輸出結果。本論文中提出一5T主動式影像感測器,提供不同於傳統主動式影像感測器輸出之非線性光響應。利用元件本身的感光二極體與電路寄生的二極體彼此相互拉扯的現象,藉由適當的操作,可獲得一非線性的光響應。除此之外,透過適當的時序控制可調整此非線性曲線的光強度的峰值,達到濾光的效果。最後,利用此非線性的光響應效果,可應用於某些二值化的影像處理上面,例如:亮點捕捉及物體輪廓的捕捉。論文中分別利用HSPICE模擬軟體與實際晶片的量測,並使用MATLAB模擬影像輸出的結果,展現此5T影像感測器的在不同即時影像處理之應用。
A CMOS image sensor with light intensity filtering feature for realizing image thresholding is proposed. The simple sensing pixel circuit with less than 5 transistors is designed to provide a tunable non-linear photo-response with a peak signal at a specified intensity level. This unique intensity-filtering photo-response characteristic is achieved by push/pull forces between an n+/p-sub photo-diode and the parasitic p+/n-well parasitic diode of the PMOS control transistor. With proper timing control of this new pixel circuit, tunable intensity filtering transfer functions can be obtained. Based on the behavior model of the pixel’s photo-response, image thresholding function is successfully demonstrated by this non-linear imager.
[1] H.-S. P. Wong, R. T. Chang, and P. D. Agnello, “CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology,” IEEE Trans. Electron Devices, vol. 45, pp. 889–894, Apr. 1998.
[2] E. R. Fossum, “CMOS image sensors: Electronic camera-on-a-chip,” IEEE Trans. Electron Devices, vol. 44, pp. 1689–1698, Oct. 1997.
[3] R. M. Guidash et al., “A 0.6 μm CMOS pinned photodiode color imager technology,” in IEDM Tech. Dig., Dec. 1997, pp. 927–929.
[4] R. H. Nixon, S. E. Kemeny, B. Pain, C. O. Staller, and E. R. Fossum, “256 ×256 CMOS active pixel sensor camera-on-a-chip,” IEEE J. Solid-State Circuits, vol. 31, no. 12, pp. 2046–2050, Dec. 1996.
[5] Orly Yaddid-Pecht, “Wide-Dynamic Range Sensor,” Society of Photo-optical Instrumentation Engineers, pp.1650-1660, October, 1999.
[6] B. Dierickx, D. Scheffer, G. Meynants, W. Ogiers, and J. Vlummens, “Random addressable active pixel image sensors,” Proc. SPIE 2950, pp.2-7, 1996.
[7] Sung-Hyun Yang, and Kyoung-Rok Cho, “High Dynamic Range CMOS Image Sensor with Conditional Reset,” IEEE Custom Integrated Circuits Conference, 2002.
[8] David X.D Yang, Abbas El Gamal, Boyd Fowler, Hui Taing, “A 640x512 CMOS Image Sensor with Ultra Wide Dynamic Range Floating-Point Pixel-Level ADC,” ISSCC, Digest of Technical Papers, Session 17, 1999.
[9] Y. Muramatsu, S. Kurosawa, M. Furumiya, H. Ohkubo, and Y. Nakashiba, “A signal-processing CMOS image sensor using a simple analog operation,” in IEEE
60
Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 2001, pp. 98–99.
[10] M. Tabet and R. Hornsey, “CMOS image sensor camera with focal plane edge detection,” in Canadian Conference on Electrical and Computer Engineering, 2, pp.1129-1133, May, 13-16 2001.
[11] B. Dierickx, D. Scheffer, G. Meynants, W. Ogiers, and J. Vlummens, “Random addressable active pixel image sensors,” Proc. SPIE 2950, 1996, pp.2-7.
[12] Gao Jun, Chen Zhongjian, Lu Wengao, Cui Wentao; Ji Lijiu, “Correlated double sample design for CMOS image readout IC,” Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference, on vol. 2, Oct. 2004 pp.1437 – 1440.
[13] M. Sasaki, M. Mase, S. Kawahito, and Y. Tadokoro, “A wide-dynamic-range CMOS image sensor based on multiple short exposure-time readout with multiple-resolution