標準製程發展微機電元件有逐步增加趨勢，而CMOS製程製作MEMS結構已有許多文獻提出，然而在機械結構設計卻無相關機械性質等參數。因此，本研究期望建立一套量測方法與參數資料庫，提供往後設計者更符合實際平台的薄膜機械性質。本研究採用現有文獻方法分析標準CMOS製程平台之金屬與介電層之機械性質，包含楊氏模數、熱膨脹係數及殘餘應力等。設計與製作具有不同金屬與介電層堆疊組成之懸臂樑測試鍵，因此標準CMOS製程之薄膜楊氏模數、熱膨脹係數及殘餘應力，透過量測微懸臂樑之結構共振頻率、出平面方向之熱變形，以及初始變形量，分別求解相關機械特性。為了驗證所採用的求解CMOS薄膜機械性質方法，本研究針對台灣積體電路製造股份有限公司(TSMC) 0.35um 2P4M CMOS標準製程進行各層薄膜性質萃取。在CMOS晶片上設計與製作八組不同堆疊之懸臂樑測試鍵，以及利用SOI晶圓製作之輔助矽懸臂樑作為測試鍵。因此，CMOS製程中金屬及介電層的等效楊氏模數、熱膨脹係數，分別量測懸臂樑之動態響應及靜態熱變形求解。另外，CMOS薄膜殘餘應力透過量測微懸臂樑初始靜態變形，搭配邊界旋轉法與Timoshenoko雙層理論進行計算。此外，設計與前述不同堆疊的懸臂量測試鍵，驗證萃取薄膜機械性質之實用性。

Standard process to develop MEMS device has gradually increased, especially exploiting CMOS process to implement MEMS device had been proposed. However, there is no complete mechanical properties database to provide designer in structural design. Therefore, in this study, expecting to establish an extraction methodology and mechanical properties database. This study employs an existing approach to determine the elastic modules, coefficient of thermal expansion (CTE), and residual stress of metal and dielectric films for standard CMOS processes. The test cantilevers with different stacking of metal and dielectric layers for standard CMOS process have been designed and implemented. Thus, the elastic modules, CTE, and residual stress of standard CMOS films can be respectively determined after the frequency responses, out-of-plane thermal deformations, and initial deformation of test cantilevers are measured. To demonstrate the feasibility of the present approach, thin films prepared by the Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC) 0.35m 2P4M CMOS process were characterized. Eight test cantilevers with different stacking of CMOS layers and the auxiliary Si cantilever on SOI wafer are fabricated. The equivalent elastic modulus and CTE of CMOS thin films includes the metal and dielectric layers are respectively determined by the resonant frequency and static thermal deformation of test cantilevers. The residual stress of CMOS films are respectively determined by boundary rotation method and Timoshenko bi-layer theory. Moreover, cantilevers with different layer-stacking other than those of the test beams have been employed to verify the measured properties.

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