本研究中，我們提出利用紫外光照射輔助無電鍍鎳磷(Ni-P)奈米顆粒，作為合成奈米碳纖維催化劑，並於400 C溫度下合成奈米碳纖維，以作為未來積體電路內連線應用。
本研究以無電鍍方式，將尺寸約6-15 nm鎳磷奈米顆粒於28 C下析鍍於溝渠壁，以作為成長奈米碳纖維之催化劑用。此因無電鍍可提供一種催化劑沉積方式，其有能力於小尺寸之連接窗孔洞與SiO2溝渠內形成催化劑，以催化生成奈米碳管或是奈米碳纖維連線。然而，在此研究中，由於奈米碳纖維缺陷和排列不整齊的石墨層結構，使得奈米碳纖維連線電阻率偏高(0.357 ohm-cm)，但相信經過進一步改進後，奈米碳纖維連線仍有其應用價值。此奈米碳纖維連線於製程上與現行積體電路製程有相容性，具備應用於未來全奈米碳結構連線之潛力。

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