靜電力顯微鏡可以量測表面電性。根據計算模擬及實驗結果可知，作用於探針上的靜電力與探針針尖的形狀及尺寸極為相關。利用奈米碳管作為針尖，我們可以得到橫向空間解析度好於 5 奈米的靜電力影像。在資訊儲存的應用方面，我們利用一般導電探針在氮化矽-氧化矽-矽結構上注入電荷，並示範出小於 35 奈米的電荷注入點，高達 520 Gbit/in^2 的超高儲存密度，小於正負 10 伏特的低寫入電壓，以及 500 ns 的寫入時間。
從儲存於氮化矽-氧化矽-矽結構中的電荷密度在高溫下的衰減行為，我們得知電荷主要往垂直表面方向脫離。藉由靜電力顯微鏡量測 250 °C到 370 °C 間的電荷衰減特性，並假設電荷衰減的機制為其受熱激發後再穿隧通過氧化矽層至矽基板，我們定量得出在氮化矽-氧化矽介面上有相當多的電荷儲存於深的位能缺陷中。此外，我們推論出在此量測溫度範圍內，這些儲存於介面的電子的激發頻率與絕對溫度平方相關。但是，儲存於介面的電洞的脫離頻率則否。這些介面電子的儲存位能及密度各約為 1.52 電子伏特以及每平方公分 1.46x10^12 個。對介面電洞則是1.01 電子伏特以及每平方公分 1.08x10^12 個。此外，介面電子缺陷的捕捉截面積約為 4.8x10^-16 平方公分。
這些儲存於氮化矽-氧化矽-矽結構中的電荷可以進一步用來控制膠體奈米粒子在表面上的吸附。我們發現以硫醇修飾表面的金以及硒化鎘(核)/硫化鋅(殼)奈米粒子都會被帶負電的表面吸引，並推論出他們在甲苯溶液中都帶有正電。金奈米顆粒可以在帶負電荷的表面上單層緊密的組裝，且形成的線寬可達到前所未及的 30 奈米。此外，其吸附作用由電泳力主導。相對的，硒化鎘/硫化鋅奈米顆粒除了電泳力之外，也受介電泳作用力影響。另外，我們藉由重複組裝程序，成功的將不同的奈米粒子分次組裝於同一表面上。這些實驗方法與結果相信對未來那些以奈米粒子為基礎的科技有相當的助益。

Electrostatic force microscopy (EFM) can be used for sensing electrical properties of surface. Both simulation and experimental results indicate that the electric force acting on the probe is very depends on the shape and dimensions of the tip. By using a carbon nanotube tip, the lateral spatial resolution of EFM image is demonstrated to be better than 5 nm. For the application on data storage, we demonstrated small bit size (< 35 nm), ultrahigh areal density (~520 Gbit/in^2), low writing voltage (< ±10 V), and short writing time (500 ns) can be achieved by using a conventional conducting probe to inject charges (electrons and holes) in to an ultrathin Nitride-Oxide-Silicon (NOS) structure.
From the charge retention behavior at high temperature, we found that decay of trapped charges in ultrathin NOS is mainly vertical process. The charge trapping properties of both electron and hole were further quantitatively determine by variable-temperature high vacuum EFM. From charge retention characteristics at temperatures between 250 °C and 370 °C and assuming thermal emission followed by oxide tunneling is the dominant decay mechanism, we deduced that there are considerable deep trap centers at the nitride-oxide (NO) interface. Besides, the retention behavior of electrons trapped at NO interface is dominated by the temperature dependent thermal emission rate: eth = αT^2exp(-Et/kBT). By contrast, the retention behavior of holes trapped at NO interface is dominated by the temperature independent emission rate: eesc = Aescexp(-Et/kBT). For electron, the interface trap energy and trap density were determined to be about 1.52 eV and 1.46x10^12 cm^2, respectively. For hole, they were about 1.01 eV and 1.08x10^12 cm^2, respectively. Furthermore, the capture cross section of electron was extracted as 4.8x10^-16 cm^2. These results may be useful for ascertaining the origin of trap centers in NOS.
Charge patterns on NOS were further used to control the assembly of colloidal nanoparticles. We found that both thiol-terminated gold and CdSe/ZnS core-shell nanoparticles can be assembled on negatively charged patterns, and deduced that these nanoparticles bear positive charges. The assembled gold nanoparticles can form close-packed monolayer at an unprecedented spatial resolution of about 30 nm. Besides, the assembly of the gold nanoparticles is dominated by the electrophoretic (EP) force. By contrast, the dielectrophoretic (DEP) force acting on the CdSe/ZnS nanoparticles may compete with the EP force. Furthermore, nanoparticles with diverse properties can be successively assembled onto different charge patterns on the same surface by repeating the assembly procedure with different nanoparticle colloids. These experimental methods and results would be beneficial for further development of nanoparticle-based applications.

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