研究生: |
周柏融 Chou, Po-Jung |
---|---|
論文名稱: |
於氧化亞銅立方體表面修飾含腈基或鹵素的乙炔基苯分子以增強其光催化活性 Photocatalytic Activity Enhancement of Cu2O Cubes through Surface Modification with Cyano- and Halide-Substituted Phenylacetylene Molecules |
指導教授: |
黃暄益
Huang, Hsuan-Yi |
口試委員: |
羅友杰
Lo, Yu-Chieh 郭俊宏 Kuo, Chun-Hong |
學位類別: |
碩士 Master |
系所名稱: |
理學院 - 化學系 Department of Chemistry |
論文出版年: | 2023 |
畢業學年度: | 111 |
語文別: | 英文 |
論文頁數: | 62 |
中文關鍵詞: | 光催化 、表面修飾 、表面官能化 、氧化亞銅 、染料光降解 、晶面效應 |
外文關鍵詞: | photocatalysis, surface modification, surface functionalization, cuprous oxide, dye photodegradation, facet effect |
相關次數: | 點閱:3 下載:0 |
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此研究顯示氧化亞銅多面體的光催化活性可藉由修飾4-乙炔基苯甲腈、4-氟苯乙炔、4-氯苯乙炔、4-溴苯乙炔來增進。具光催化惰性的氧化亞銅正立方體被這些分子激活,菱形十二面體和正八面體氧化亞銅的光催化活性在修飾了4-乙炔基苯甲腈後也有提升。紅外光譜確認分子和氧化亞銅的鍵結。實驗發現電洞在甲基橙降解反應中比電子起著更重要的作用,並揭示了電子在修飾了4-氟苯乙炔、4-氯苯乙炔、4-溴苯乙炔的氧化亞銅中不同程度的重要性。電子自旋共振光譜儀的測量表明羥基自由基在水溶液中是主要的活性物質。X射線光電子能譜儀揭示分子修飾後氧化亞銅的電子密度會有變化。修飾4-乙炔基苯甲腈的氧化亞銅立方體可進行光催化之芳基硼酸羥基化反應。從密度泛函理論計算中揭示接4-乙炔基苯甲腈後所會產生能隙態以促進電子轉移到分子,另外電荷密度差的積分值和Bader電荷差計算也支持這個結果。4-乙炔基苯甲腈與真空能級之間的位能差變小也有助於電子可以經由4-乙炔基苯甲腈出去。
Photocatalytic activities of Cu2O polyhedra are enhanced by modifying with various molecules such as 4-cyanophenylacetylene (4-CNA), 4-fluorophenylacetylene (4-FA), 4-chlorophenylacetylene (4-CA), and 4-bromophenylacetylene (4-BA). The photocatalytically inert Cu2O cubes are activated by all these molecules, while those of Cu2O rhombic dodecahedra and octahedra were also enhanced with 4-CNA functionalization. Infrared spectroscopy was used to confirm the bonding of molecules to Cu2O crystals. Hole and electron scavenger examinations showed that holes play a more important role than electrons in methyl orange degradation reaction, and revealed different degrees of importance of electrons in 4-FA, 4-CA, and 4-BA cases. EPR measurements indicated that hydroxyl radical is the major reactive species in aqueous solution. XPS technique revealed the electron density changes of Cu2O after modifying molecules. 4-CNA-modified Cu2O cubes can also photocatalyze arylboronic acid hydroxylation reactions. Density functional theory (DFT) calculations were conducted for 4-CNA-modified Cu2O surfaces, revealing the emergence of a 4-CNA-induced in-gap state to facilitate electron transfer to the molecule. Charge density difference and Bader charge difference calculations also support this result. The potential difference between 4-CNA and the vacuum level become smaller implying that electrons can escape from Cu2O through 4-CNA.
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