以High-k材料作為矽晶及HIT太陽電池鈍化層之研究

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研究生：	林慶廉 Lin, Ching-Lian
論文名稱：	以High-k材料作為矽晶及HIT太陽電池鈍化層之研究 Surface passivation of c-Si and HIT solar cells with high-k material
指導教授：	曾孝明 Tseng, Shiao-Ming 黃惠良 Hwang, Huey-Liang
口試委員:	張廖貴術林堅楊
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2014
畢業學年度：	102
語文別：	英文
論文頁數：	71
中文關鍵詞：	原子層化學氣相沉積、High-k 、鈍化層
相關次數：	點閱：3 下載：0
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在現今的太陽電池中，超過85%的太陽電池仍以矽材料為基板，效率的提升受限於載子在矽基板表面的複合，可以透過在表面鍍製一層鈍化層(Passivation layer)來降低載子在表面的複合。
在本篇論文中,使用原子層化學氣相沉積法(Atomic layer chemical deposition,簡稱 ALD)來鍍製High-k 材料薄膜當作鈍化層。首先鍍製不同High-k材料於單晶矽太陽電池，試了不同的鈍化條件：無High-k鈍化層、正面Al2O3、雙面Al2O3及雙面HfO2，實驗結果發現雙面鍍製HfO2可以達到較佳的鈍化效果，轉換效率達到15.542%。接下來將HfO2鍍製於HIT太陽電池表面當作鈍化層，同樣試了不同的鈍化條件：無HfO2鈍化層、IP面HfO2、IN面HfO2、雙面HfO2及不同的HfO2厚度，實驗結果發現鍍製8Å的HfO2在HIT的雙面可以達到最高的轉換效率，使用鈍化層的Cell，Voc為0.61V；Jsc為31.276mA/cm2；FF為0.612；效率提升至11.68%。

Over 85% of the solar cells currently produced are based on crystalline silicon wafers. The efﬁciency of silicon solar cells is signiﬁcantly affected by electronic recombination losses at the wafer surfaces. A surface passivation layer can be used to reduce electronic recombination losses.
In this study, we used Atomic Layer chemical Deposition (ALD) to deposit high-k material as a passivation layer. At first we deposited different high-k materials on c-Si solar cells. We tried different passivation conditions, such as without high-k passivation, with Al2O3 in the front side, with Al2O3 on both sides, and with HfO2 on both sides. The result showed that cell with HfO2 on both sides achieved the highest efficiency of 15.542%. We also deposited HfO2 on HIT solar cells as surface passivation layer. Different passivation conditions such as without HfO2 passivation, with HfO2 on IP side, with HfO2 on IN side, and with HfO2 on both sides are used. HIT solar cell having passivation with HfO2 (8Å) on both sides achieved the highest efficiency. The highest efficiency obtained for HIT cell with HfO2 passivation was 11.68%, with a Voc of 0.61 V, Jsc of 31.276 mA/cm2 and FF of 0.612.

摘要                                Ⅰ
Abstract                                                            Ⅱ
致謝                                                            Ⅲ
Contents                                                        Ⅴ
Chapter1    Introduction                                        1
1    Solar cells                                                1
2    Basic Principle of Solar Cells                                4
2.1     Absorption of Light                                    6
2.2     IV Curve                                            7
2.3     Open-Circuit Voltage                                    8
2.4     Short-Circuit Current                                    9
2.5     Fill Factor                                            11
2.6     Efficiency                                            11
2.7     Quantum Efficiency                                    12
3    Objective                                                14
4    References                                                15
Chapter2    Passivation Techniques of Silicon Solar Cells    17
1    Recombination in Solar Cells                                17
1.1     Recombination Through Defect Levels                    18
1.2     Lifetime                                                18
1.3     Diffusion Length                                        19
1.4     Surface/Interface Recombination                        20
2    Surface Passivation                                        21
2.1     Conventional Passivation Methods                        21
2.2    High-k Passivation                                    22
2.2.1    Different high-k Material for Passivation            22
2.2.2    HfO2 Passivation                                23
3    High-k Passivation on c-Si Solar Cell                         25
4    High-k Passivation on HIT Solar Cell Passivation                26
5    References                                                27
Chapter3    Experimental Techniques                        29
1    Atomic Layer Deposition                                    29
2    E-gun Evaporation System                                31
3    Characterization Tools                                    31
3.1     High-resolution Thermal Field Emission Scanning Electron  Microscope                                            31
3.2     Solar Simulator                                        32
3.3     Incident photon conversion efficiency spectrum system    33
3.4     CV Measurement system                                34
3.5     Lifetime Measurement system                            38
3.6     XPS Measurement system                            38
4    Experiment Process Flow                                    39
4.1    Sample Preparation                                    39
4.2    Cell Preparation                                        40
5    References                                                41
Chapter4    Results and Discussion                            42
1    MIS Tunneling Phenomena                                42
2    c-Si Solar Cell with High-k passivation                        43
2.1    C-V Measurement                                    43
2.2    Lifetime Measurement                                    45
2.3    XPS Analysis                                            46
2.4    Cell Performance                                        51
3    HIT Cell with HfO2 passivation                                52
4    References                                                70
Chapter5    Future Work                                        71

                                

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