異向性磁阻 (Anisotropy Magnetoresistance, AMR) 為常見的同平面方向磁感測器材料，因為形狀異向性的原因導致其不利於量測出平面方向磁場。本研究延續團隊先前所開發的技術，使用鎳金屬的柱狀微結構作為磁導引結構，將出平面磁場轉換成同平面磁場，藉此實現出平面方向量測。透過整合微機電技術中常使用的厚光阻製程與電鍍製程，取代現有組裝方式以達到精準對位。在本研究中，首先針對磁阻晶片的設計提供參考指南，透過調變不同尺寸的方式，找出磁導引與磁阻薄膜之間的磁場關聯性。對於導線間隙為70 µm的繞折式異向性磁阻感測器而言，隨著磁導引與磁阻薄膜之間的距離從20 µm減小到0 µm時，感測靈敏度可提高4.6倍。此外，當磁導引固定在繞折式異向性磁阻感測器的導線間隙正中間時，隨著間隙從70 µm減小到50 µm，靈敏度提高5.6倍。接著，本論文第二部分則進一步開發新穎的三軸磁力計，由兩個現有的用於同平面磁場感測的純AMR薄膜與一個新穎的孔雀形狀佈線設計所組成，該孔雀形狀佈線放置具有香菇形結構陣列作為增強磁場收集的磁導引結構強化訊號效果。並且透過徑向對稱設計，孔雀形狀的AMR薄膜在不同方位的同平面磁場下都能提供相似的訊號大小，因此能夠實現出平面和同平面感測訊號的解耦合。量測結果表明，所提出的孔雀形狀AMR薄膜在不同方位角的同平面磁場下都提供相同的電阻變化。出平面磁場的訊號靈敏度為-2×10-4 %/Gauss。最後，本研究延伸異向性磁阻的應用，提出了一種新型觸覺力感測器，其由異向性結構作為感測單元、高分子材料作為彈簧，以及剛性磁體作為觸覺凸塊（接觸界面）所組成。當施加正向力時，會使高分子材料變形並造成磁鐵的位移，改變AMR薄膜接收到的磁力線密度，進而導致AMR的電阻發生變化。測量結果證明了所提出的AMR力感測器設計的可行性，在圓柱形磁鐵下的AMR 力感測器的靈敏度範圍為-2.6×10-3 至 -6.4×10-3 %/N，而長方形磁鐵所提供的靈敏度範圍為-2.4×10-3 至 -8.9×10-3 %/N。

Anisotropy Magnetoresistance (AMR) is a common material used for in-plane magnetic sensors. This study integrates the columnar microstructure of nickel materials as a magnetic guide structure to convert out-of-plane magnetic fields into in-plane magnetic fields, thereby achieving out-of-plane direction measurements. By integrating thick photoresist and electroplating processes commonly used in MEMS technology, the current assembly methods are replaced to achieve precise alignment. This research first develops a design guideline for the chip, finding the relationship between the magnetic guide and the AMR thin film by modulating different dimensions. For a serpentine AMR sensor with a wire gap of 70 µm, the sensor sensitivity can be increased by 4.6 times as the distance between the magnetic guide and the AMR thin film is reduced from 20 µm to 0 µm. Additionally, when the magnetic guide is fixed at the center of the wire gap of the serpentine AMR sensor, the sensitivity can be increased by 5.6 times as the gap is reduced from 70 µm to 50 µm.
Next, the second part of this thesis further develops a novel triaxial magnetometer, composed of two existing pure AMR films for in-plane magnetic field sensing and a new peacock-shaped wiring design. This peacock-shaped wiring is placed with a mushroom-shaped structure array as a magnetic guide structure to enhance the signal effect of magnetic field collection. Due to the radially symmetrical design, the peacock-shaped AMR film can provide similar signal magnitudes under in-plane magnetic fields in different orientations, thus easily achieving decoupling of out-of-plane and in-plane sensing signals. Measurement results show that the proposed peacock-shaped AMR film provides the same resistance change under in-plane magnetic fields at different azimuth angles. The signal sensitivity for the out-of-plane magnetic field is -2 × 10-4 %/Gauss.
Finally, this study extends the application of anisotropy magnetoresistance by proposing a novel tactile force sensor, composed of an anisotropic structure as the sensing element, a polymer package as the spring, and a rigid magnet as the tactile bump (contact interface). When a normal force is applied, it deforms the polymer and causes displacement of the magnet, changing the magnetic flux density received by the AMR film, thereby leading to a change in AMR resistance. Measurement results demonstrate the feasibility of the proposed AMR force sensor design, with the sensitivity range of the AMR force sensor under a cylindrical magnet being -2.6 × 10-3 to -6.4 × 10-3 %/N, and under a rectangular magnet being -2.4 × 10-3 to -8.9 × 10-3 %/N.

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