研究生: |
梁振偉 Chen-Wei Liang |
---|---|
論文名稱: |
雷射剝鍍法製作BMT緩衝層及其對PZT薄膜之影響研究 |
指導教授: |
林樹均
Su-Jien Lin 林諭男 I-Nan Lin |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2003 |
畢業學年度: | 91 |
語文別: | 中文 |
論文頁數: | 84 |
中文關鍵詞: | 雷射鍍膜法 、鋇鎂鉭 、鋯鈦酸鉛 、有機金屬鹽裂解法 、優選取向 |
外文關鍵詞: | PLD, BMT, PZT, MOD, preffered orentation |
相關次數: | 點閱:3 下載:0 |
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鋯鈦酸鉛(PZT)薄膜應用中,矽基板與白金矽基板是最常見的基板選擇,這是由於製程整合度與技術成熟的考量。而為了得到最佳的薄膜特性,則需成長出(100)優選取向之鋯鈦酸鉛鐵電薄膜。一般而言,要在上述兩種基板上得到優選取向的PZT薄膜相當不容易﹔其中對於金屬有機鹽裂解法(MOD)製程而言,更是困難許多。在本實驗中,成功開發出新的緩衝層材料─Ba(Mg1/3Ta2/3)O3 (BMT)。BMT為性質優良的微波介電材料,與PZT同為鈣鈦礦結構,且晶格常數與PZT相同。
本實驗以脈衝雷射剝鍍法在矽基板與白金矽基板上成長具(100)優選取向的BMT薄膜。而PZT薄膜則以金屬有機鹽裂解法鍍在BMT緩衝層上。傳統上,PZT薄膜因為晶格常數的關係,無法直接成長在矽基板上,而在白金矽基板上則易出現微裂紋的問題。然而,藉由BMT緩衝層的幫助,無論是矽基板還是白金矽基板上,皆可得到具有(100)優選取向的PZT薄膜,且緻密度與平整性都相當優量。在本論文中,將探討製程參數對於BMT緩衝層之微結構與結晶取向的關係﹔以及BMT緩衝層對於PZT薄膜微結構與特性之影響。
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