本論文以氮化銦/氮化銦鎵柱狀結構來製作發光二極體，包含了製作流程、電性量測以及其發光特性，並與本實驗室薄膜樣品的二極體做比較，可發現儘管因接觸電阻較大使得起始電壓值略高，但並聯電阻約大35倍左右，代表著柱狀結構一維材料的優越性，沒有差排(dislocation-free)，接面品質較好，較少的缺陷(defect)，並且更能掌握電子傳導路徑，使得我們的柱狀發光二極體有較小的漏電流，並且於室溫下量測其廣區(macro)及微區(micro)的發光的情形。另外由文獻也可得知柱狀發光較薄膜強，變溫下也較穩定，且其製作流程與傳統二極體相比，差異不大，再加上可調控氮化銦鎵發光波段特性，對於應用於全彩顯示元件、白光照明等有很大的發展潛力。同時我們也製作p-GaN蕭特基二極體，利用電容-電壓量測技術來決定其受體離子濃度值。

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