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| 研究生： |
陳威亦 Wei-Yi Chen |
|---|---|
| 論文名稱： |
鍶鈦鋯系鈣鈦礦薄膜之電阻轉換特性研究 |
| 指導教授： |
吳振名
Jenn-Ming Wu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學工程學系 Materials Science and Engineering |
| 論文出版年： | 2008 |
| 畢業學年度： | 96 |
| 語文別： | 中文 |
| 論文頁數： | 182 |
| 中文關鍵詞： | 電阻轉換效應 、鈣鈦礦 、燈絲理論 |
| 相關次數： | 點閱：3 下載：0 |
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近年來由於電阻式記憶體(RRAM)具有優越的特性且元件簡單為金屬-絕緣體-金屬(MIM)。由於運作僅需搭配一個電晶體型成1T1R結構，所佔體積小因此足以作為下世代非揮發性記憶體應用。鈣鈦礦材料以發現可應用於RRAM，然而相關的電阻轉換機制仍未明朗，因此尋找相關電阻轉換效應機制為重要課題。
本論文分為兩部份，第一部份為鈦酸鍶材料利用磁控電將濺鍍法在不同溫度下鍍製於Pt/TiOx/SiO2/Si基板，並搭配Pt為上電極作成MIM結構元件。當偏壓小於2V時元件並不具有電阻轉換機制，其顯現的電滯效應，可能由於trap內部載子跟不上施加電場而產生鬆弛現象造成。偏壓大於2V時元件呈現bipolar特性，並搭配介電分析探討其電阻轉換機制為介面Schottky Barrier改變造成。施壓compilance使元件於高電流下產生soft breakdown，量測其unipolar特性，搭配介電分析以及time evolution量測，發現unipolar的電阻轉換效應依循燈絲理論。對相同元件而言unipolar之阻值比大於bipolar阻值比。
第二部份為鋯鈦酸鍶材料利用磁控電將濺鍍法在不同溫度下鍍製於Pt/TiOx/SiO2/Si基板，並搭配Pt為上電極作成MIM結構元件。元件並未具有bipolar特性，且電流傳導為bulk limit。高電流下施壓compilance元件產生soft breakdown，顯現出unipolar特性。當薄膜內部ZrO2雜相越少其絕緣性則越好，且高低電阻值比當高阻態絕緣性越好則越大。搭配介電分析以及time evolution量測，發現unipolar的電阻轉換效應依循燈絲理論。
比較白金、鈦酸鍶以及鋯鈦酸鍶三種材料unipolar高阻態之電阻率，白金為導體，鈦酸鍶可視為為半導體而鋯鈦酸鍶為絕緣體。絕緣性越好之材料其unipolar電阻值比越大。
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