本論文乃是利用無遮罩電漿蝕刻製程來製造次微米長柱狀鑽石棒(SDRs)。本實驗使用13.56MHz之射頻功率輸出100 W之功率產生氧氣電漿來蝕刻拋光之硼參雜與未參雜之多晶鑽石膜。SDRs表面附著一層氧化鐵。此氧化鐵利用歐傑能譜儀與X射線光電子能譜儀來鑑定。我們提出在氧氣電漿蝕刻下鑽石表面會自我生成一層氧化鐵遮罩。此微米尺寸光罩保護其下的鑽石膜，進而促進鑽石柱的形成。
硼參雜單晶鑽石棒(SCDRs)被利用來製作鋁/鑽石之蕭基二極體。每一根SCDR乃是從一顆單晶鑽石晶粒中被抽取出來。鋁╱鈦金屬被用來當歐姆接觸，鋁被用來當蕭基接觸。為了增進元件的特性，在鋁╱鑽石形成前，氫電漿處理是一步重要製程。在施予正偏壓-3V 時，鋁/鑽石之蕭基二極體展現極高的電流密度 1.4x104 A/cm2
在多晶鑽石膜上垂直陣列排列的硼參雜SDRs被利用來探討其場發效應。SDRs長約4.5 □m，直徑約383 nm。在氧電漿蝕刻過程中氧化鐵鍍附在SDRs表面，造成低起始電場和低電流密度。當利用鹽酸洗去表面之氧化鐵時，場發特性大幅提升。在酸洗完後，SDRs展現低起始電場 4.5 V/□m 和高電流密度 30 mA/cm2。然而因為在高電流下造成SDRs 尖端鈍化，使的場發射體只能穩定維持一段時間。
利用SDR來製作的MSM光二極體，進一步照射鎢絲燈，白光和254 nm的紫外光來分析其特性。在SDR兩端鍍鋁金屬來形成MSM結構。剛刮下來的SDR經由繞射圖分析是由三顆晶粒組成。在3 V的偏壓下，當MSM照射鎢絲燈與白光時均會產生10-6 A的高光電流。在-1V的偏壓下，次微米鋁╱鑽石MSM光二極體展現出高的響應778 A/W。

Long submicron diamond rods (SDRs) in long conical shape have been fabricated by mask-free plasma etching process. Both undoped and doped polished polycrystalline diamond were etched in oxygen plasma generated by a radio-frequency power of 100 W at 13.56 MHz. The SDR is coated with a Fe2O3 layer, as characterized by Auger electron spectroscopy, X-ray photoemission microscopy. We propose that a “self-forming” mask of Fe2O3 is generated during the etching process in which iron atoms sputtered from the substrate holder are deposited and oxidized on the diamond surface forming “micromask”. The “micromask” protects the underlying diamond and promotes the formation of SDRs.
The boron doped single crystalline diamond rods (SCDRs) were used to fabricate Al/diamond Schottky diodes. Each SCDR was extracted from a grain in the polycrystalline film. The as-scratched SCDR was confirmed to be single crystalline diamond by electron diffraction measurements. Al/Ti and Al metals were deposited to form ohmic and Schottky contacts, respectively. A hydrogen plasma treatment is an essential step prior to the formation of Al/diamond Schottky contact in order to improve the device performance. The submicron scale Al/diamond Schottky diode exhibits a very high current density of 1.4 x104 A/cm2 at a forward bias (VF) voltage of -3V.
Vertically aligned boron doped SDRs on the polycrystalline diamond film were used to investigated their field emission properties. The SDRs are ~4.5 □m in height and ~383 nm in diameter. Iron oxide is coated on SDRs in the formation of one-dimensional SDRs during oxygen plasma etching. The as-etched SDRs suffer with high turn-on field (ETO) and low field emission current density (JFE) due to the iron oxide. A huge improvement in the field emission characteristics can be achieved by removing iron oxide using a wet-etch process in a diluted HCl (37%). After the wet-etch, the SDRs exhibit a low ETO value of 4.5V/□m (at 10 □A/cm2) and a high JFE value of 30 mA/cm2 (at 8.5 V/□m). However, the FE emitter is only stable for a short period of time at high current stress owing to the rounding of the tips of SDRs.
MSM photodiodes fabricated on submicron scale diamond rods (SDRs) was respectively characterized under the illumination of tungsten light, white light and 254nm UV light. Al metals were deposited on both side of a SDR to form a MSM structure. The as-scratched SDR was confirmed to be three single crystalline diamond grains by electron diffraction measurements showing different fuzzy spot patterns at different part of a SDR. A high photocurrent of 10-6 A at a bias of 3 V was measured when the MSM photodiode was exposed to tungsten light and white light. The submicron scale Al/diamond MSM photodiode exhibits a very high responsibility of 778 A/W at a forward bias (VF) voltage of -1V when exposed to 254nm UV light.

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