本研究的主要焦點是通過鎳薄膜成核形成遮罩和RIE（反應離子刻蝕）在太陽能電池中的應用，在多晶矽晶片上製造奈米仿生欄柵結構。奈米仿生欄柵結構在波長範圍500nm至1000nm內有最低的反射率為2％，在400nm到1050nm的波長範圍內，反射率是在4％以下。另外增加消除RIE損傷的製程，使用HNO3/HF/H2O的混和液蝕刻和高溫退火，藉以提高少數載子的壽命時間。我們量測少數載子的壽命時間在RIE製程後和消除RIE損傷製程後，發現少數載子的壽命時間從1.43us增加至29.25us時間。優於平整沒有結構的少數載子的壽命時間3.77us。
最後，我們在製作奈米仿生光柵結構後，繼續後續製程擴散、沉積抗反射鈍化層、網印和燒結完成太陽能電池，我們實現了9.26％的效率，短路電流（Jsc）為30mA/cm2，開路電壓（Voc）為0.53V，填充因子（FF）為0.53。

關鍵字:多晶矽、太陽能電池、欄柵、次波長

This study focus on the fabrication of nano bionic grating structures in polycrystalline silicon wafer by nucleation of nickel thin film and RIE(reactive ion etching) for solar cell application. The lowest reflection of nano bionic grating structures obtained was 2% in the range of wavelength from 500nm to 1000nm and from 400nm to 1050nm wavelength range, the reflection was below 4%. Extra damage elimination processes using HNO3/HF/H2O and high temperature anneal were carried out in addition to the process flow to enhance the carrier life time. We measured the life time after RIE and damage elimination processes and life time enhanced from 1.43us to 29.25us.
Finally, we fabricated poly-Si solar cell with nano bionic grating structures after the process steps such as doping, anti-reflective, passivation coating deposition, screen printer electrode, and co-fired and we achieved an efficiency of 9.26% with a short circuit current (Jsc) of 30mA/cm2, open circuit (Voc) of 0.53V, and fill factor (FF) of 0.53. Key word: Solar, Poly, Grating, Sub-wavelength

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