平面顯示器中OLED因其有可撓性且有良好的亮度和對比，成為當今研究的熱門主題之一，而OLED中的PLED更有著可發展大尺寸和成本低廉的優點，本實驗室的研究重點在於製作PLED並藉由主動式驅動電路，發展一個基本的顯示器架構。其中主動式驅動電路利用二個有機薄膜電晶体再加上一個電容形成所謂的2T1C來驅動LED的主動式元件，如何提升2T1C中transistor的效能，即是我們的努力目標，這裡我們試驗以Dipping coating來達到此目的。本論文研究以dip-coating的方式來改善rr-P3HT場效電晶体的效能；我們以玻璃為基板，鍍上金屬鉻當gate，使用APCVD生長200nm左右的氧化層，以lift off的方法製作Source、Drain的金電極；之後再以dip-coating的方式產生HMDS(使基板更親水、P3HT(主動層)，以dip-coating所製作出來的薄模有比一般的成膜方法擁有更好的自組性即膜內分子的排列比一般方式整齊，所產生出來的FET元件都可達到不錯的mobility性質。我們研究使用氯仿(Chloroform)、對二甲苯(P-xylene)、甲苯(toluene)來作為P3HT的溶劑；改變溶液的濃度和dip-coating拉速來觀察對試片載子遷移率(mobility)和on/off ratio的影響，嘗試不同條件來提升元件的效能，並試驗以氮氣回烤、封裝後續處理來提升on/off ratio。我們的結果使電晶体載子遷移率達到 的order，最好的結果是0.298 略微超越目前文獻上所發表的以玻璃為基板、P3HT為材料中最高0.28 而on/off ratio也有3000左右，成功地達到效能提升的成果。

We try to improve the performance of rr-P3HT Field Effect Transistor by dip coating.
Glass is the substrate with SiO2(APCVD) gate dielectric layer about 200nm. .S-D(Au) is deposited by (thermally grow) and lifted off. Afterward we dip the sample into HMDS and solution with P3HT to make the active layer. We change the different solvents of P3HT (Chloroform、P-xylene、Toluene), the concentration of solutions and the speed of dip coating to observe the variation of sample mobility and on/off ratio. Finally we try to make samples exposure to N2 gas or packed for several days to increase the on/off ratio. Our results is that sample mobility achieve order and the best is 0.298 with 3000 on/off ratio.

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