本實驗中，我們使用射頻磁控濺鍍法沈積Dy2O3和Sm2O3薄膜，所得到的結果顯示絕緣層厚度為8.6和19nm，在電晶體的特性、表面粗糙操度及電流機制的分析，皆有加以研究及探討。
我們成功地製作了N通道的金屬（Al）/氧化鏑（Dy2O3）及氧化釤(Sm2O3)/半導體（p-Si）的場效電晶體，臨界電壓約在0.2及0.8V，最小的次臨界斜率分別是97和80 mV/dec.，在VD=0.05V下，ION/IOFF的比例有4~5個數量級，顯示電晶體有不錯的電流切換能力。經由次臨界斜率St=2.3(kT/q)[1+(CD+Cit)/Cox]的計算，可以得到界面缺陷電荷密度（Dit）分別為5.82x1012和1.37x1012cm-2-eV-1，而藉由split C-V的方式，我們求得電子的遷移率為251和211cm2/V-s。藉由升溫300K到425K，我們得到臨界電壓對溫度微分的結果，Sm2O3和Dy2O3的電晶體分別為-4.71mV/K和-3.45mV/K/。
等效厚度為2.97nm的Al/ Sm2O3/ p-Si界面間的電流傳導機制在溫度325K~500K為蕭基發射所主導，所得到的Al/ Sm2O3的蕭基能帶高為0.82 eV及電子的有效質量為0.13m0。
本實驗中，我們探討了表面粗糙度。在熱退火溫度400~900℃，高介電係數材料與矽之間的表面粗糙度會越來越小，一般來說，Dy2O3/ p-Si 和Sm2O3/ p-Si的介面粗糙度為 0.3~0.5nm。在物性方面，也做了XRD、SIMS、XPS、TEM 和AFM的分析。

Abstract
Metal-insulator-semiconductor (MIS) capacitors and n-channel Metal-oxide-semiconductor-field-effective-transistors (MOSFETs) with Sm2O3 and Dy2O3 gate dielectrics were fabricated. The electrical conduction mechanism in Sm2O3 thin films was investigated. The surface roughness of the Sm2O3 and Dy2O3 capacitors was measured by atomic force microscope (AFM). The rms roughness values of the Sm2O3 and Dy2O3 thin films at rapid-thermal-annealed at 500℃ are 1.92 nm and 1.1 nm with an oxide thickness of 19nm. After removing the Sm2O3 and Dy2O3 films surface roughness of silicon is in the range from 0.3~0.5nm.
It was found that Schottky emission was the dominating conduction mechanism in the electrical field from 0.08 to 0.81 MV/cm in the temperature range from 325K to 500K. Fowler-Nordheim tunneling is the dominating conduction mechanism at the electrical field above 0.9 MV/cm at 77K. The Al/Sm2O3 barrier height and the effective electronic mass calculated from these two conduction mechanisms using an iteration method are 0.82 eV and 0.13 mo, respectively.
The MOSFETs with Sm2O3 and the Dy2O3 gate dielectric layers show normal IDS-VDS and IDS-VGS characteristics. The effective electron mobility was measured by the split C-V method. The values of the mobility of MOSFETs with Sm2O3 and Dy2O3 gate dielectric are 211 and 251 cm2/V-s, respectively. The dependence of the threshold voltage on temperature for n-channel MOSFETs with Sm2O3 and Dy2O3 gate dielectric was also measured. The δVT/δT values are -4.71 mV/K and -3.45mV/K for n-channel MOSFETs with Sm2O3 and the Dy2O3 gate dielectrics, respectively.

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