多層低溫共燒陶瓷具備整合主動元件或模組及被動元件的能力，並能同時達到模組縮小化及低成本的要求。再者，低溫型可共燒陶瓷(LTCC)構裝材料系統因具有低介電常數(4-8)，可縮短訊號的延遲時間,並在相對低溫下(800-1000oC)可與高導電性金屬共燒，以降低訊號在傳遞時強度的減弱，並且其膨脹係數可配合IC元件。一般所知陶瓷構裝材料都有相當高的燒結溫度(1250oC以上)，因此限制了所使用的金屬導體材料。在1250oC以上使用之金屬導體係高含量的Pd、Pt等銀合金，此類合金或金屬都有較高的傳導電阻(conductivity resistance)。因此，欲應用在低溫可燒成之高頻用陶瓷基版材料時，材料組成及燒結完成後須具有較低之介電常數、且熱膨脹係數可與矽晶片之熱膨脹係數配合，同時要在l000oC以下能夠和銅、銀、金、銀鈀等金屬導體同時緻密燒結(co-fire)，及保有適當的機械強度及優良之介電特性。
本研究採用鈣斜長石基之玻璃陶瓷系統，利用含有玻璃相的多晶固體材料，其製造由原料選擇及熔融製備玻璃開始，經過高溫均質化後得到玻璃陶瓷粉體，在固定升溫速率下施予熱處理。利用熱分析之方法得到鈣斜長石基玻璃陶瓷粉在熱處理中玻璃結晶的相關資料及重要之玻璃軟化點溫度。同時，由於結晶溫度會受到表面成核及內部異質成核數目的影響，也評估了成核劑對結晶溫度的影響。研究中著重CaO-Al2O3-2SiO2玻璃陶瓷系統中孕核現象之機制探討及晶體成長動力學之分析。並以此為基礎，可在非恆溫熱處理製程中控制粉體燒結行為，使其在鈣斜長石陶瓷相開始成長前完全緻密化。由化學組成、孕核劑、粉末粒徑大小及非恆溫結晶熱處理程序的調整，深入研究晶體的相轉變過程、陶瓷結晶之量化評估、以及各種相關微結構的觀察及相鑑定分析。並分析其高頻介電性質後，可符合在LTCC高頻通訊元件之應用。本研究成功研發不含鉛化物與鹼金屬離子之玻璃陶瓷系統，可在低於900℃之溫度時藉著玻璃質之黏度流動使粉體完全燒結緻密以去除空孔缺陷，再經過非恆溫熱處理 (<950℃)使其歷經非均質孕核及高度結晶化而得到一低介電常數(k=8)，及極低之高頻介電損失(<0.0005)低溫共燒之基板材料，且其熱膨脹係數與矽晶片之值相當接近，故在LTCC高頻元件應用上有相當大之開發潛力。

To develop a low-loss, lead-free, non-alkali LTCC substrate material for microwave/microelectronics applications, glass composites in the CaO-Al2O3-SiO2 system with nucleating agents were employed to derive anorthite-based glass-ceramic powders. A systematic study of nucleation and growth kinetics in the anorthite-based glass-ceramic was conducted. The determination of crystallization kinetic parameters for anorthite (CaO-Al2O3-2SiO2) glass containing TiO2 as nucleating agents was performed by non-isothermal process. Thermal characteristics, microstructure and phase transformation during non-isothermal heat-treatment were explored with the aid of DTA, HTXRD, OM, EPMA, SEM, TEM technologies.
Under non-isothermal conditions, the crystallization activation energy for anorthite glass nucleated with TiO2 was evaluated as 412kJmol-1. An analytical approach to acquire the Avrami constant was established by introducing appropriate boundary conditions. This technique, considered as three-dimensional bulk crystallization during non-isothermal treatment with various heating rates, provided reasonable precision in determination of Avrami constant.

Anorthite crystals showed preferential nucleation at specific sites with rutile TiO2 crystals precipitated from the glassy matrix and anorthite crystallization was governed by heterogeneous volume nucleation, in which the efficient nucleation temperature for this glass-ceramic was 780~820°C. High density and unimodal distribution of nuclei throughout glass powders and the associated mechanism was volume crystallization predominant for anorthite-based glass-ceramic powders. The introduced TiO2 thus played the role of nucleating agents to reducing the crystallization temperature lower than 900ºC for anorthite-based glass-ceramics.

A dense and low-loss glass-ceramic with predominant crystal phase of anorthite was successfully produced by using ultra-fine glass powders with sub-micron scale particle size distribution. Fully-densified temperature was as low as 900°C, and sufficient crystallization could be achieved by subsequently raising the firing temperature to 950°C, accompanied by the enhanced dielectric quality factor. The degree of crystallization affected the dielectric property of sintered glass-ceramics, such as the dielectric constant(k), quality factor(Q), coefficient of thermal expansion(CTE), temperature coefficient of frequency(TCF), temperature coefficient of dielectric constant(TCK). After considering the sintering and crystallization mechanisms, the optimization of heat-treatment process for as-fabricated CaO-Al2O3-SiO2 glass-ceramics was presented. In addition, by controlling the crystallinity of anorthite crystal, the 5wt.% TiO2 nucleated anorthite glass-ceramic possessed a preferable dielectric constant of 8 and a rather low dielectric loss of 0.00045 at 10GHz, which are attractive for application in future LTCC substrates.

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