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研究生: 林俊宏
Chun-Hung Lin
論文名稱: 含備援限制的可修復記憶體之備援分析架構評估工具
A Tool for Evaluating Redundancy Analysis Schemes in Reparable Memories with Redundancy Constraints
指導教授: 吳誠文
Cheng-Wen Wu
口試委員:
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 英文
論文頁數: 45
中文關鍵詞: 嵌入式記憶體記憶體修復備援分析模擬
外文關鍵詞: Embedded Memory, Memory Repair, Redundancy Analysis, Simulation
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  • 近年來,嵌入式記憶體已經是系統晶片(System-on-Chip)中一種廣泛使用的重要元件。隨著製程技術的發展,記憶體核心越來越稠密,佔據整個系統晶片中大部份的面積,並且決定了整個晶片的良率。因此,對一個系統晶片產品來說,將記憶體的良率保持在一個合理的水準是很重要的。基於這個目的,記憶體設計者通常使用備用的記憶體元件來修復主記憶體上的缺陷,以改善出貨良率。然而,即便是在相同的製程技術之下,不同的主記憶體設計以及備援記憶體架構亦可能導致截然不同的修復效率以及良率。為了在合理代價之下得到最高良率,記憶體的備援分析(Redundancy Analysis)是不可或缺的。

    為了更容易地評估記憶體修復效率,我們提出了一個備援分析模擬器。透過一個系統化的記憶體結構以及備援記憶體使用限制表示方法,模擬器可以針對各式各樣不同的記憶體設計進行模擬,配合使用者指定的備援分析演算法,得到相對應的修復率以及良率,以供記憶體設計者用作評估或是修改設計時的參考。此外,我們亦提出了數個可以提前終止分析運算的簡單判斷法則,並實現於模擬器之中,以縮短費時的備援分析模擬運算時間。實驗數據驗證了我們的備援分析模擬器確實能有效率地對在備援記憶體使用限制之下的記憶體架構以及備援分析演算法進行評估。


    Embeddedmemory is one of themost widely used cores in current system-on-chip (SOC). Memory
    cores are more and more compact, and dominate the silicon area and yield of the chip. However,
    caused by process variation and some defects, how to maintain the yield of memory is an important
    issue. Today, redundancy repair methodology is widely used to enhance memory yield. Different
    memory and redundancy architecture may lead to different efficiency of redundancy repair and
    thus final yield under a specific process.

    In this work, we propose a redundancy analysis (RA) algorithm simulation tool to evaluate the
    efficiency of repair. The RA simulator reports the repair rate (the ratio of the reparable memory
    count to the defective memory count) and yield (after repair) with given RA algorithm, associated
    memory configuration, and redundancy structure. We have defined a systematic representation
    method to describe memory architecture and redundancy constraint. With our tool, the user can
    easily evaluate and plan the memory architecture and redundant elements. To reduce the simulation
    time, some early terminate criteria are developed and implemented. Experimental results show that
    our RA simulator can effectively evaluate the RA algorithm and memory structure, considering
    redundancy constraints.

    1 Introduction 1 1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Proposed Redundancy Analysis Simulator . . . . . . . . . . . . . . . . . . . . . . 2 1.3 ThesisOrganization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Redundancy Analysis Simulation Tool Review 4 2.1 Redundancy Analysis Algorithm Simulation Tool . . . . . . . . . . . . . . . . . . 4 2.2 LimitationofRAISIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Redundancy Analysis Simulator with Redundancy Constraints 9 3.1 Overview of Redundancy Analysis Simulation Flow . . . . . . . . . . . . . . . . . 9 3.2 FaultyMemorySpecification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.2.1 MemoryArchitecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.2.2 Redundancy Constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.2.3 Defect Injection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.2.4 FaultTranslation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.3 Redundancy Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.4 SimulationTimeReduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4 Repair Rate and Yield 30 4.1 Evaluation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 4.2 Modification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 5 Experimental Results 35 6 Conclusions and Future Work 41 6.1 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 6.2 FutureWork . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

    [1] Semiconductor Industry Association, “International technology roadmap for semiconductors
    (ITRS), 2005 edition”, Dec. 2005.
    [2] P. Camurati, P. Prinetto, M. S. Reorda, S. Barbagallo, A. Burri, and D. Medina, “Industrial
    BIST of embedded RAMs”, IEEE Design & Test of Computers, vol. 12, no. 3, pp. 86–95,
    Fall 1995.
    [3] A. J. van de Goor, Testing Semiconductor Memories: Theory and Practice, ComTex Publishing,
    Gouda, The Netherlands, 1998.
    [4] J. Dreibelbis, J. Barth, H. Kalter, and R. Kho, “Processor-based built-in self-test for embedded
    DRAM”, IEEE Jour. of Solid-State Circuits, pp. 1731–1740, Nov. 1998.
    [5] C.-T. Huang, J.-R. Huang, C.-F. Wu, C.-W. Wu, and T.-Y. Chang, “A programmable BIST
    core for embedded DRAM”, IEEE Design & Test of Computers, vol. 16, no. 1, pp. 59–70,
    Jan.-Mar. 1999.
    [6] K. Zarrineh and S. J. Upadhyaya, “On programmablememory built-in self test architecutres”,
    in Proc. Conf. Design, Automation, and Test in Europe (DATE), Paris, Mar. 1999, pp. 708–
    713.
    [7] D. K. Bhavsar, “An algorithm for row-column self-repair of RAMs and its implementation
    in the Alpha 21264”, in Proc. Int’l Test Conf. (ITC), Atlantic City, Sept. 1999, pp. 311–318.
    [8] S. Nakahara, K. Higeta, M. Kohno, T. Kawamura, and K. Kakitani, “Built-in self-test for
    GHz embedded SRAMs using flexible pattern generator and new repair algorithm”, in Proc.
    Int’l Test Conf. (ITC), 1999, pp. 301–310.
    [9] T. Kawagoe, J. Ohtani, M. Niiro, T. Ooishi, M. Hamada, and H. Hidaka, “A built-in selfrepair
    analyzer (CRESTA) for embedded DRAMs”, in Proc. Int’l Test Conf. (ITC), 2000, pp.
    567–574.
    [10] Y. Nagura, M. Mullins, A. Sauvageau, Y. Fujiwara, K. Furue, R. Ohmura, T. Komoike, T. Okitaka,
    T. Tanizaki, K. Dosaka, K. Arimito, Y. Koda, and T. Tada, “Test cost reduction by
    at-speed BISR for embedded DRAMs”, in Proc. Int’l Test Conf. (ITC), Baltimore, Oct. 2001,
    pp. 182–187.
    [11] A. Benso, S. Chiusano, G. Di Natale, and P. Prinetto, “An on-line BIST RAM architecture
    with self-repair capabilities”, IEEE Trans. on Reliability, vol. 51, no. 1, pp. 123–128, Mar.
    2002.
    [12] Y. Zorian and S. Shoukourian, “Embedded-memory test and repair: Infrastructure IP for SoC
    yield”, IEEE Design & Test of Computers, vol. 20, pp. 58–66, May-June 2003.
    [13] J.-F. Li, J.-C. Yeh, R.-F. Huang, C.-W. Wu, P.-Y. Tsai, A. Hsu, and E. Chow, “A built-in
    self-repair scheme for semiconductor memories with 2-D redundancy”, in Proc. Int’l Test
    Conf. (ITC), Charlotte, Sept. 2003, pp. 393–402.
    [14] S.-Y. Kuo and W. K. Fuchs, “Efficient spare allocation in reconfigurable arrays”, IEEE
    Design & Test of Computers, vol. 4, no. 1, pp. 24–31, Feb. 1987.
    [15] R.-F. Huang, J.-F. Li, J.-C. Yeh, and C.-W. Wu, “A simulator for evaluating redundancy
    analysis algorithms of repairable embedded memories”, in Proc. IEEE Int’l Workshop on
    Memory Technology, Design and Testing (MTDT), Isle of Bendor, France, July 2002, pp.
    68–73.
    [16] R.-F. Huang, J.-F.-Li, J.-C. Yeh, and C.-W. Wu, “RAISIN: A tool for evaluating redundancy
    analysis schemes in reparable embedded memories”, IEEE Design & Test of Computers, vol.
    24, no. 3, May-June 2007.
    [17] J. Segal, A. Jee, D. Lepejian, and B. Chu, “Using electrical bitmap results from embedded
    memory to enhance yield”, IEEE Design & Test of Computers, vol. 15, no. 3, pp. 28–39,
    May 2001.
    [18] Z. Al-Ars, A. J. van de Goor, J. Braun, and D. Richter, “Simulation based analysis of temperature
    effect on the faulty behavior of embedded DRAMs”, in Proc. Int’l Test Conf. (ITC),
    Baltmore, Oct. 2001, pp. 783–792.
    [19] W.-K. Huang, Y.-N. Shen, and F. Lombardi, “New approaches for the repair of memories
    with redundancy by row/column deletion for yield enhancement”, IEEE Trans. on Computer-
    Aided Design of Integrated Circuits and Systems, vol. 9, no. 3, pp. 323–328, Mar. 1990.
    [20] M. Tarr, D. Boudreau, and R. Murphy, “Defect analysis system speeds test and repair of
    redundant memories”, Electronics, pp. 175–179, Jan. 12 1984.

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