錫銀銅覆晶微接點暨鋁導線外加機械應力之電遷移研究

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研究生：	李建成 Chien Chen Lee
論文名稱：	錫銀銅覆晶微接點暨鋁導線外加機械應力之電遷移研究 Investigation of Electromigration Characteristic in SnAg3.0Cu0.5 Flip Chip Interconnection and the External Mechanical Stress Impact of Al Thin Film
指導教授：	江國寧 Kuo Ning Chiang
口試委員:
學位類別：	博士 Doctor
系所名稱：	工學院 - 動力機械工程學系 Department of Power Mechanical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	143
中文關鍵詞：	電致遷移、電流擁擠、焦耳熱、平均失效時間、金屬界層、錫銀銅無鉛凸塊、Polarity效應、Tilting效應、外加機械應力、四點彎折
外文關鍵詞：	Electromigration, Current crowding, Joule heating, Mean-time-to-failure, Intermetallic compound, Polarity effect, Tilting effect, Blech strip, External mechanical stress
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積體電路的鋁導線中所施加電流密度若高於105 A/cm2時，將在陰極產生孔洞而在陽極產生凸起，此電致遷移現象導致導線損壞為常見的破壞模式。當現今覆晶封裝微接點的尺寸到達35 μm時，其電流密度將達到104 A/cm2，在此電流密度下，電致遷移將會造成覆晶封裝微接點的損壞。因此在覆晶封裝微接點中，由於電致遷移所產生的各種行為及效應值得深入探討。
本研究首先討論在高電流密度運作下，錫銀銅無鉛凸塊的電致遷移行為，來進行平均失效時間預估的探討，研究中也應用了有限元素法來分析因為電流擁擠所產生的最大電流密度所發生的位置，以及微接點的電流密度分布。在電致遷移所產生的孔洞擴散現象方面，除了文獻中所提出的薄餅狀孔洞現象，本研究也觀察到另一種因電致遷移行為所產生的棉花狀孔洞，此棉花狀孔洞是由於在施加電流之前、或是在施加電流的同時，於陰極/晶片端已經有微小裂縫存在所導致。且由棉花狀孔洞所造成的損壞時，其於陽極/基板端的金屬界層厚度，大於由薄餅狀孔洞所產生的厚度。在電致遷移所產生的介面反應現象方面，除了文獻中所提出的Polarity效應，本研究也觀察到在較高電流密度下才較易觀察得到的Tilting效應，此效應顯示，只有在陽極/晶片端會觀察到金屬界層會延著電流流動的路徑形成。此一現象與本研究中有限元素分析所得到結果一致。
在外加機械應力對鋁導線的影響之研究中，本研究設計並製造了沒有保護層的Blech strip以及相關治具來討論外加機械應力對鋁導線電致遷移的影響。在試件實驗條件達到平衡後，陰極端的鋁原子濃度會由原始的約74%降低至約60%，而陽極端的鋁原子濃度會由原始的約74%增加至約85%。本研究亦提出當外加-50 MPa至+50 Mpa拉伸應力下，此外加機械應力對鋁導線電致遷移的影響，屬於微小但仍可以被觀察到程度。

Electromigration damage was examined under a current density magnitude higher than 105 A/cm2, which led to the void in the cathode and the hillock in the anode and consequently, the failure of the aluminum conductor. Electromigration has also become one of the failure mechanisms when the flip chip solder joint interconnects shrink to 35 μm, in which the current density magnitude will increase up to 104 A/cm2. With these, the reactions and effects of flip chip solder joint electromigration have become to be of great interest.
Thus, this study investigates the electromigration of SnAg3.0Cu0.5 flip chip bumps by adopting Black’s equation to investigate the mean-time-to-failure prediction. Maximum current density was simulated using the finite element method, thereby providing a better understanding of local heat as well as current crowding. The current crowding phenomenon enhances the void formation at the entry points of the cathode side of the solder bumps. In the aspect of electromigration-induced void phenomenon, in addition to the pancake-type void failure mode proposed in the literature, a cotton-type void failure mode was also found in this study. Cross-sectional scanning electro microscopy images showed that the cotton-type void formation may due to the bump with a crack in the cathode/chip side before or during the current stressing. The cotton-type void failure mode intermetallic compounds layer at the anode/substrate side was thicker than that of the pancake-type void failure mode. In the aspect of electromigration effects on interfacial reaction, in addition to the polarity effect proposed in the literature, a more obvious tilting effect was found at the anode/chip side along the electron flow path under a higher current stressing condition.
The unpassivated aluminum thin film test specimens and the four-point-bend equipment have been successfully fabricated to investigate external mechanical stress impact during the electromigration test. This study also found that once the thin films reach equilibrium after the electromigration test, the aluminum atomic concentration, originally at 74%, decreases to about 60% at the cathode and increases up to about 80% at the anode. In addition, this study revealed that applying external mechanical stress has a small but finite effect on critical length. Under the external mechanical stress range of –50 to +50 MPa tensile stress, the higher the tensile stress applied, the shorter the critical length becomes.

TABLE OF CONTENTS
ABSTRACT (CHINESE)    I
ABSTRACT    II
ACKNOWLEDGEMENT    IV
TABLE OF CONTENTS    V
LIST OF TABLES    VII
LIST OF FIGURES    VIII

CHAPTER 1  INTRODUCTION    1
1 Motivation of Research    1
2 Literature Survey    2
2.1 An Overview of Electromigration    2
2.2 Electromigration in Thin Film Conductor    5
2.3 Electromigration in Solder Bump    9
2.4 Analysis of the Failure Mechanism of Solder Bump under Current Apply    13
2.5 Numerical Simulation of Electromigration and Void Formation    15
3 Research Goals and Methodology    18

CHAPTER 2  FUNDAMENTAL THEORIES    20
1 Diffusion Mechanisms    20
1.1 Chemical Potential Diffusion    21
1.2 Stress-Assisted Diffusion    22
2 Electromigration Mechanism    22
2.1 The Electromigration Flux    23
2.2 The Critical Product of Current Density for Electromigration    25
2.3 Mean-Time-To-Failure    26
3 Experimental Measurement    28
3.1 Determining the Average Temperature of Solder Joint Under Test condition    28
3.2 Statistical Analysis of Reliability Experimental Data    29
3.3 Intermetallic Compound Growth    31
4 Fundamental Theories for Electromigration Numerical Simulation    32
4.1 Numerical Method and Convergence Criteria    33
4.2 Solder Joint Shape Predicting for the Finite Element Model    34
4.3 Electromagnetic Field Analysis Using the Finite Element Method    36

CHAPTER 3  EXPERIMENTAL AND SIMULATION PROCEDURE    41
1 Electromigration in Flip Chip Solder Bump    41
1.1 Experimental Design, Sample Preparation, and Applied Condition Setup    41
1.2 Joule Heating and TCR Measurement    43
2 Electromigration in Al Thin Film    47
2.1 Experimental Design, Sample Preparation, and Applied Condition Setup    47
2.2 Electromigration Testing Under External Mechanical Stress    49
3 Establishment of the Finite Element Model    53

CHAPTER 4  ELECTROMIGRATION DISCUSSION IN FLIP CHIP SOLDER BUMP    55
1 Effects of Joule Heating and Current Crowding in Flip Chip Solder Bumps    55
1.1 Average Temperature of Test Vehicle and Time-To-Failure Measurement    57
1.2 Mean-Time-To-Failure Prediction    58
2 Electromigration-induced Failure Modes of The Flip Chip Solder Joint    62
3 Finite Element Prediction and Experimental Verification    65
3.1 Current Crowding Induces Void Formation Simulation of the Solder Bump    65
3.2 Cross-Sectional Scanning Electron Microscopy Validation    68
3.2 Polarity and Tilting Effect Discussion    69

CHAPTER 5  ELECTROMIGRATION DISCUSSION IN ALUMINUM THIN FILM     72
1 Critical Length and Critical Product of the Aluminum Thin Film    72
2 Atomic Concentration Change of the Aluminum Thin Film    74
3 Effect of Applying the External Mechanical Stress    76

CHAPTER 6  CONCLUSIONS AND RECOMMENDATIONS    79
1 Conclusions    79
2 Future Work and Recommendations    81

REFERENCES    83
TABLES    96
FIGURES    102

                                

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