近年來一維奈米結構受到很多研究人員的注意，主要是因為其特殊的性質以及將來可能在微電子與光電元件方面的應用。本研究主要著重在自組裝金粒子六角網狀陣列上成長矽以及氧化矽奈米線及其成長機制、鈦金屬在矽奈米線上熱處理臨場觀察、以及非晶質矽鍺薄膜的結晶行為。利用場發射掃描式電子顯微鏡、穿透式電子顯微鏡、以及電腦模擬程式Vienna ab initio simulation package 來作為本研究觀測分析研究的工具。
首先，在氮氣的氣氛下可以在不同基材(Al2O3 (0001)、Si (111))上製備自組裝金粒子六角網狀陣列，將這金粒子陣列當作奈米線的催化劑。接著，將兩種粉末(純矽加上二氧化矽粉末、純矽粉末)當作固態來源放置於爐管高溫區(1200 度) ，利用氣相傳送的方式，在置於爐管低溫區(900 度)的金粒子陣列上氧化矽奈米線。成長是在Ar氣氛下，經過3-5個小時而完成的。
利用純矽加上二氧化矽粉末當作固態來源的條件下，經過5 個小時的成長，在Al2O3 (0001)基材的金粒子陣列發現了特殊的形貌--奈米線會選擇性生成在金粒子的某些截面上。實驗發現金粒子的{111}方面族的截面會平行Al2O3 (0001)基材，而這些截面是不會成長奈米線，而奈米線會選擇性成長在有高分佈梯階(ledges)的截面上。然而如果利用純矽粉末，就不會有這樣的現象。這個結果同樣可以利用first-principle total energy以及molecular dynamics的計算與模擬得到。這種選擇性成長的機制對於之後將自組裝金粒子六角網狀陣列的應用設計有很大的幫助。
如果是在Si (111)基材上，情形又會有所不同。金粒子仍是很好的催化劑，所有的氧化矽奈米線都是選擇性的成長在有金粒子的地方，但是，金粒子的截面會消失，整個金粒子會趨向球型。在成長奈米線900 度下，氣氛中的矽蒸氣與基材中的矽原子會溶入金粒子而形成金矽(Au-Si)的液滴，這液滴會持續的溶入氣氛中的矽原子，進而達到飽和的狀態，矽奈米線就因此生成。因為爐管中的氧氣氧化奈米線，最後觀測到的奈米線為氧化矽奈米線。
將氧化矽加上石墨粉末當作固態來源，合成出直徑約30 nm、長度可以超過10 μm的矽奈米線，在超高真空(ultrahigh vacuum)的環境，鍍上鈦金屬，利用電子顯微鏡來做臨場實驗，對鈦金屬在單根矽奈米線系統的相變化過程進行研究。
實驗結果顯示，矽奈米線在室溫鍍上鈦金屬以後，會有非晶質層的產生。而經過400、600、700 度的退火後，Ti5Si3、Ti5Si4、C49-TiSi2等鈦矽合金相分別產生，這些結晶相大多在矽奈米線的表面發現。而經過800 度高溫退火後，整根矽奈米線也轉變為C49-TiSi2鈦矽合金奈米線，但是儘管退火溫度達到850 度，C49-TiSi2鈦矽合金奈米線也沒有轉變為C54-TiSi2，這樣的現象可能是因為矽奈米線有比較少的成核點濃度，增加相轉換的困難，所以造成C49-與C54-TiSi2鈦矽合生成溫度比在薄膜系統下來的緩慢。
透過高分辨電子顯微鏡配合Auto-correlation function的分析，發現在剛成長完的非晶質矽鍺薄膜中，存在中等規則排列的結構與奈米晶粒。同時也在一系列的觀察發現，在非晶質矽鍺薄膜裡面的奈米晶粒，其濃度會隨著退火溫度有所變化，在退火溫度在300到350 度之間，奈米晶粒的濃度會隨溫度的增加而減少；相反的，在退火溫度400到 450 度之間，奈米晶粒的濃度會隨溫度的增加而增加，這樣的結晶行為可以用自由能隨退火溫度的變化來加以解釋。

The growth mechanism of SiOx nanowire on the self-assembled hexagonal Au particle networks has been investigated. Self-assembled hexagonal networks with discrete Au particles on different substrates were generated in samples annealed under N2 flow. A vapor transport process was used for the growth of SiOx nanowires. Two kinds of solid sources were used in this work: (1) high purity Si powder (purity 99.96 %) mixed with approximately 50 wt. % SiO2 powder (Si + SiO2); and (2) high purity Si powder only. These powders were placed in an alumina boat as the source material and positioned at the high-temperature (1200 0C) zone of a tube furnace. Ar gas was used as the carrier gas. The nanowires were grown onto Al2O3 (00•1) and Si (111) substrates located at the low-temperature (900 0C) zone of the furnace. After 3-5 hr of reaction, SiOx nanowires were found to grow on the Au particles. The resulting samples were characterized by scanning electron microscopy, transmission electron microscopy. The simulations were performed with the Vienna ab initio simulation package, using the non-normconserving ab initio Vanderbilt pseudopotentials method.
On Al2O3 (00•1) substrate, preferred growth of SiOx nanowires on patterned facetted Au particles has been achieved with Si + SiO2 as the solid source after annealing at 900 0C for 5 hr. The {111} facets of Au particles were found to be parallel to the Al2O3 substrate and free from nanowire growth. On the other hand, SiOx nanowires were found to grow on {001} facets with a high density of ledges on the surface. Furthermore, nanowires were found to grow on all over the Au particles when pure Si was used as the solid source. The results are consistent with those obtained by the first-principle total energy and molecular dynamics computation and simulation. The preferred growth may be exploited to grow silica nanowires controllably in designated directions.
On the Si (111) substrate, the nanowires grew selectively on the Au particles. The facets of Au particle tended to disappear and the Au particle became more spherical after nanowire growth. Nanowires were grown selectively on spherical Au particles on Si (111). The Si atoms in the vapor and from the substrate could be incorporated into Au particle to form Au-Si liquid droplet on Si (111) substrate at 900 0C. The liquid droplet continued to dissolve the Si atoms from the vapor and became saturated to induce the growth of Si nanowires selectively on Au particles. Subsequently, the Si nanowires were oxidized to grow the amorphous Si oxide nanowires. Therefore, the nanowires grown at Au particle network on Si substrate were designated as SiOx nanowires.
The phase formation sequence of Ti on a single SiNW during heat treatment in ultrahigh vacuum has been studied by in-situ TEM observation and HRTEM examination.
A SiNW with a diameter of about 30 nm and a length of more than 10 μm was obtained by using SiO + C powders as solid source. Amorphous layer was observed in the SiNW after Ti deposition in UHV-TEM at room temperature. The Ti5Si3, Ti5Si4 and C49-TiSi2 were found to appear near the surface of the SiNW annealed at 400, 600 and 700 0C, respectively.
After annealing at 800 0C, the whole SiNW transformed to C49-TiSi2 nanowire. For C49-TiSi2 nanowires annealed up to 850 0C, no C54-TiSi2 phase was found. The reduced density of nucleation sites on the SiNW was thought to be the main reason for the retarded transformation of C49- and C54-TiSi2 phase.
The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 0C then increases in samples annealed at 400-450 0C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

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Chapter 3
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Chapter 4
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Chapter 5
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2. J. Hu, T. W. Odom, and C. M. Lieber, “Chemistry and Physics in One dimension: Synthesis and Properties of Nanowires and Nanotubes,” Acc. Chem. Res. 32, 435-445 (1999).
3. J. Hu, L. Li, W. Yang, L. Manna, L. Wang, and A. P. Alivisatos, “Linearly Polarized Emission from Colloidal Semiconductor Quantum Rods,” Science 292, 2060-2063 (2001).
4. D. P. Yu, Q. L. Hang, Y. Ding, H. Z. Zhang, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, and S. Q. Feng, “Amorphous Silica Nanowires: Intensive Blue Light Emitters,” Appl. Phys. Lett. 73, 3076-3078 (1998).
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8. G. M. Whitesides and B. Grzybowski, “Self-Assembly at All Scales,” Science 295, 2418-2421 (2002).
9. C. L. Haynes and R. P. Van Duyne, “Nanosphere Lithography: A Versatile Nanofabrication Toll for Studies of Size-Dependent Nanoparticle Optics,” J. Phys. Chem. B 105, 5599-5611 (2001).
10. P. Y. Su, J. C. Hu, S. L. Cheng, L. J. Chen, and J. M. Liang, “Self-Assembled Hexagonal Au Particle Networks on Silicon From Au Nanoparticle Solution,” Appl. Phys. Lett. 84, 3480-3482 (2004).
11. J. J. Wu, T. C. Wong, and C. C. Yu, “Growth and Characterization of Well-Aligned nc-Si/SiOx Composite Nanowires,” Adv. Mater. 14, 1643-1646 (2002).
12. Y. J. Chen, J. B. Li, and J. J. Dai, “Si and SiOx Nanostructures Formed via Thermal Evaporation,” Chem. Phys. Lett. 344, 450-456 (2001).
13. G. W. Meng, X. S. Peng, Y. W. Wang, C. Z. Wang, X. F. Wang, and L. D. Wang, “Synthesis and Photoluminescence of Aligned SiOx Nanowire Arrays,” Appl. Phys. A 76, 119-121 (2003).

Chapter 6
1. P. Y. Su, J. C. Hu, S. L. Cheng, L. J. Chen, and J. M. Liang, “Self-Assembled Hexagonal Au Particle Networks on Silicon From Au Nanoparticle Solution,” Appl. Phys. Lett. 84, 3480-3482 (2004).
2. G. Kresse and J. Hafner, “Ab Initio Molecular-Dynamics Simulation of the Liquid-Metal–Amorphous-Semiconductor Transition in Germanium,” Phys. Rev. B 49, 14251-14269 (1994).
3. Z. L. Wang, “Structural Analysis of Self-Assembling Nanocrystal Superlattices,” Adv. Mater. 10, 13-30 (1998).
4. Z. L. Wang, “New Developments in Transmission Electron Microscopy for Nanotechnology,” Adv. Mater. 18, 1497-1514 (2003).
5. N. Wang, Y. H. Tang, Y. F. Zhang, C. S. Lee, and S. T. Lee, “Nucleation and Growth of Si Nanowires From Silicon Oxide,” Phys. Rev. B 58, R16024-R16026 (1998).
6. H. Bialas and K. Heneka, “Epitaxy of FCC Metals on Dielectric Substrates,” Vacuum 45, 79-87 (1994).
7. Y. J. Chen, J. B. Li, and J. J. Dai, “Si and SiOx Nanostructures Formed via Thermal Evaporation,” Chem. Phys. Lett. 344, 450-456 (2001).
8. G. W. Meng, X. S. Peng, Y. W. Wang, C. Z. Wang, X. F. Wang, and L. D. Wang, “Synthesis and Photoluminescence of Aligned SiOx Nanowire Arrays,” Appl. Phys. A 76, 119-121 (2003).

Chapter 7
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Chapter 8
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Chapter 10
1. H. Bialas and K. Heneka, “Epitaxy of FCC Metals on Dielectric Substrates,” Vacuum 45, 79-87 (1994).