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研究生： 劉子正
Liu, Zi-Jheng
論文名稱： 金屬氧化物電阻轉換元件在交叉點記憶體上的應用
Metal-Oxide Resistive Switching Devices for Cross-Point Memory Applications
指導教授： 林樹均
Lin, Su-Jien
甘炯耀
Gan, Jon-Yiew
口試委員: 吳振名
Wu, Jenn-Ming
曾俊元
Tseng, Tseung-Yuen
謝光宇
Hsieh, Kuang-Yeu
學位類別： 博士
Doctor
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2014
畢業學年度： 102
語文別： 英文
論文頁數： 66
中文關鍵詞： 氧化鋅 、氧化鉭 、非揮發記憶體 、選擇元件 、電阻式記憶體 、交叉點記憶體 、一二極體一電阻器 、一選擇器一電阻器 、互補式電阻開關
外文關鍵詞： Zinc oxide, Tantalum oxide, Nonvolatile memory, Selector devices, Resistive random access memory (RRAM), Cross-point memory, One diode-one resistor (1D1R), One selector-one resistor (1S1R), Complementary resistive switch (CRS)
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    • 傳統快閃記憶體正面臨微縮至20奈米以下的技術瓶頸，而且其耐久性不佳（反覆開關10^6次）和寫入速度慢（寫入時間大約1微秒）等問題仍未有效解決。電阻式記憶體具有優秀的微縮能力、簡單結構、開關速度快（小於10奈秒）、高耐用性（反覆開關可超過10^10次）和保持力（記憶維持超過10年），且與互補式金氧半電晶體的前段與後段製程技術皆有良好的相容性，因此已被視為未來可取代快閃記憶體的潛力記憶體技術。除此之外，電阻式記憶體可整合在交叉點元件陣列中，並且藉著三維立體的堆疊結構大幅提升其記憶密度，進而達到高密度記憶體的目標，但其中主要的挑戰就是元件特性的變異性和元件結構的設計。因此，此論文提出織構化材料技術來改善氧化鋅電阻式記憶體的穩定性，並且提出氧化鋅和氧化鉭材料系統的元件結構來降低潛行漏電流，另外，也針對不同的元件非線性特性和讀取模式來分析交叉點記憶體陣列的尺寸極限和能耗。

    Conventional FLASH memory is facing technological bottlenecks to scale down to sub-20 nm nodes, and its unsatisfactory endurance (~10^6 cycles) and long programming time (~1 us) have not been effectively improved. Resistive random access memory (RRAM) is a promising candidate to replace FLASH memory due to its excellent scalability (<10 nm), simple structure, fast switching speed (<10 ns), robust endurance (>10^10 cycles), long retention (>10 years), and good compatibility with CMOS front- and/or back-end-of-line processing. In addition, RRAM devices can be integrated in cross-point arrays, and their memory density can be further increased by three-dimensional stacking. For high-density cross-point memory applications, the challenges of RRAMs will be their variability and cell structure design. Thus, a textured material technology is proposed to reduce switching variability of ZnO-based RRAMs. In addition, ZnO- and Ta2O5-based cell structures are proposed for reducing sneak-path leakage. Furthermore, array size limitations and power consumption are investigated regarding different current-voltage (I-V) nonlinearity and read schemes.

    List of Figures I List of Tables V Acknowledgments VI 摘要 VII Abstract VIII Chapter 1 Introduction 1 1.1 Memory Background 1 1.1.1 An Overview of Memory Technologies 1 1.1.2 Conventional FLASH Memory 2 1.2 Resistive Random Access Memory (RRAM) 5 1.2.1 Classification, Mechanisms, and Material Selection Criteria 5 1.2.2 Cell Structures for High-Density Memory Arrays 10 1.3 Research Objectives and Thesis Overview 15 1.4 References 16 Chapter 2 Textured ZnO Thin Films for Improved Switching Variability 21 2.1 Introduction 21 2.2 Device Fabrication and Characterization 21 2.3 Results and Discussion 23 2.4 Summary 30 2.5 References 31 Chapter 3 ZnO-Based Mott-Barrier Diodes as Selector Devices for Enhancing Cross-Point Array Size 32 3.1 Introduction 32 3.2 Device Fabrication and Characterization 34 3.3 Results and Discussion 36 3.4 Summary 48 3.5 References 49 Chapter 4 Ta2O5-Based Components for Enhancing Cross-Point Array Size 51 4.1 Introduction 51 4.2 Device Fabrication and Characterization 52 4.3 Results and Discussion 53 4.4 Summary 60 4.5 References 61 Chapter 5 Conclusion 62 5.1 Contributions of This Work 62 5.2 Future Directions 63 5.3 References 64 Curriculum Vitae 65 Publications 66

    Chapter 1
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    Chapter 2
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    Chapter 3
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    Chapter 4
    [1] H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-oxide RRAM,” Proceedings of the IEEE, vol. 100, pp. 1951-1970, 2012.
    [2] R. Waser, R. Dittmann, G. Staikov, and K. Szot, “Redox-based resistive switching memories—Nanoionic mechanisms, prospects, and challenges,” Advanced Materials, vol. 21, pp. 2632-2663, 2009.
    [3] H. K. Yoo, S. B. Lee, J. S. Lee, S. H. Chang, M. J. Yoon, Y. S. Kim, B. S. Kang, M.-J. Lee, C. J. Kim, B. Kahng, and T. W. Noh, “Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells,” Applied Physics Letters, vol. 98, 183507, 2011.
    [4] M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U-I. Chung, I.-K. Yoo, and K. Kim, “A fast, high- endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures,” Nature Materials, vol. 10, pp. 625-630, 2011.
    [5] Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, “Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism,” IEEE Technical Digest International Electron Devices Meeting, 2008, pp. 293-296.
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    [7] I. G. Baek, C. J. Park, H. Ju, D. J. Seong, H. S. Ahn, J. H. Kim, M. K. Yang, S. H. Song, E. M. Kim, S. O. Park, C. H. Park, C. W. Song, G. T. Jeong, S. Choi, H. K. Kang, and C. Chung, “Realization of vertical resistive memory (VRRAM) using cost effective 3D process,” IEEE Technical Digest International Electron Devices Meeting, 2011, pp. 737-740.
    [8] J.-J. Huang, Y.-M. Tseng, C.-W. Hsu, and T.-H. Hou, “Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications,” IEEE Electron Device Letters, vol. 32, pp. 1427-1429, 2011.
    [9] W. Lee, J. Park, S. Kim, J. Woo, J. Shin, G. Choi, S. Park, D. Lee, E. Cha, B. H. Lee, and H. Hwang, “High current density and nonlinearity combination of selection device based on TaOx/TiO2/TaOx structure for one selector–one resistor arrays,” ACS nano, vol. 6, pp. 8166-8172, 2012.
    [10] E. Linn, R. Rosezin, C. Kügeler, and R. Waser, “Complementary resistive switches for passive nanocrossbar memories,” Nature Materials, vol. 9, pp. 403-406, 2010.
    [11] J. Liang and H.-S. P. Wong, “Cross-point memory array without cell selectors— Device characteristics and data storage pattern dependencies,” IEEE Transactions on Electron Devices, vol. 57, pp. 2531-2538, 2010.
    [12] B. Govoreanu, C. Adelmann, A. Redolfi, L. Zhang, S. Clima, and M. Jurczak, “High-Performance Metal-Insulator-Metal Tunnel Diode Selectors,” IEEE Electron Device Letters, vol. 35, pp. 63-65, 2014.
    [13] Z. Zhang, Y. Wu, H.-S. P. Wong, and S. S. Wong, “Nanometer-Scale HfOx RRAM,” IEEE Electron Device Letters, vol. 34, pp. 1005-1007, 2013.

    Chapter 5
    [1] H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, “Metal-oxide RRAM,” Proceedings of the IEEE, vol. 100, pp. 1951-1970, 2012.
    [2] B. Govoreanu, G. S. Kar, Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, “10×10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low energy operation,” IEEE Technical Digest International Electron Devices Meeting, 2011, pp. 729-732.
    [3] Z. Zhang, Y. Wu, H.-S. P. Wong, and S. S. Wong, “Nanometer-Scale HfOx RRAM,” IEEE Electron Device Letters, vol. 34, pp. 1005-1007, 2013.
    [4] M. W. Allen, S. M. Durbin, and J. B. Metson, “Silver oxide Schottky contacts on n-type ZnO,” Applied Physics Letters, vol. 91, 053512, 2007.
    [5] M.-S. Oh, D.-K. Hwang, J.-H. Lim, Y.-S. Choi, and S.-J. Park, “Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation,” Applied Physics Letters, vol. 91, 042109, 2007.
    [6] L. J. Brillson, H. L. Mosbacker, M. J. Hetzer, Y. Strzhemechny, G. H. Jessen, D. C. Look, G. Cantwell, J. Zhang, and J. J. Song, “Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation,” Applied Physics Letters, vol. 90, 102116, 2007.
    [7] B. Govoreanu, C. Adelmann, A. Redolfi, L. Zhang, S. Clima, and M. Jurczak, “High-Performance Metal-Insulator-Metal Tunnel Diode Selectors,” IEEE Electron Device Letters, vol. 35, pp. 63-65, 2014.

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