我們以角解析光電子能譜研究TTC分子成長於平整銀薄膜/鍺(111)這個系統，而重點在於藉由銀薄膜的量子井態來探討TTC分子與平整銀薄膜接觸介面的電子結構。隨著TTC成長在銀薄膜上，我們發現量子井態的能量位置往費米能階(低束缚能)的方向偏移，以及真空能階降低。這兩個現象可由鏡像電荷模型去解釋(這兩個現象與惰性氣體成長在貴金屬上所發生的結果相似，因為TTC可與惰性氣體分子做很好的類比)。此外，我們利用波爾-索莫菲量子化定則得出量子井態能量偏移值與銀薄膜厚度的關係，再將這關係擬合到我們的數據上，來萃取出真空介面相位的變化值， ∆∅=-0.62±0.08 (乾淨的銀薄膜與成長上單原子層TTC分子的銀薄膜之變化值)。接著我們考慮吸附物介電常數效應的虛擬位能模型，結合真空能階降低與量子井態的能量偏移，可得出單原子層的TTC分子的介電常數 ε=1.30 ~ 1.51。

We have studied the interfacial structures of TTC on uniform Ag thin films grown on Ge(111) by angle-resolved photoemission spectroscopy (ARPES) through the quantum- well states (QWSs) of the silver thin films.
From the experimental results, we found that both the quantum-well-state energy positions and the vacuum-level shift depend on the coverage of TTC layer. The Ag QWSs shift toward the Fermi level and the vacuum level decreases with the increasing coverage of TTC films. We used the mirror-force model coupled with Bohr-Sommerfeld quantization rule to quantitatively simulate our measured energy shift of QWSs versus Ag thickness upon adsorption of 1 ML TTC films. The phase change at the film/vacuum interface thus derived is -0.62±0.08 and the resulting dielectric constants  for 1 ML TTC film by applying modified image potential model is 1.30~1.51.

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