電漿在業界與科學研究領域皆廣泛使用，如鍍膜、蝕刻、清潔、殺菌、表面處理等用途。清潔方面，常用在電子顯微鏡的碳汙染處理，因此本論文於高密度電漿源中，研究中空陰極電漿源的特性與模態轉換現象，並實際應用於電漿清潔，希望達到有效清潔效果。另外還製作高頻(HF)變頻放大器，可變頻率範圍10~20 MHz，並使用此功率源產生之高頻電漿研究中空陰極電漿源的頻率特性。實驗中使用Langmuir Probe量測不同頻率之氬氣在模態轉換前、後的電漿密度與電子溫度，同時量測電漿維持電壓、放電電流與相位差，對應實際觀察的模態轉換現象進一步討論中空陰極電漿源之電漿特性與模態轉換；再使用OES觀察氧氣、空氣電漿在不同條件的光譜強度，了解電漿密度變化趨勢，並實際應用於PVC的電漿清潔，觀察其效果。實驗結果為，氬氣在20MHz、8 sccm、壓力51 mTorr、探針距離垂直電極10 cm 、130 W下，電漿密度可達 。且不同頻率皆有模態轉換現象，頻率越高者越快達到臨界電漿密度並進入Hollow Cathode Mode。氬氣在探針距離垂直電極10 cm、流量8 sccm、壓力51 mTorr下臨界電漿密度約 。在13 MHz，電漿密度約從 變為 ，增加至三倍之多。PVC的電漿清潔效果上，在功率100 W、頻率20 MHz、10 MHz、流量15 sccm、holder距離電極8.5 cm之氧氣電漿、空氣電漿隨時間增加水滴角降低，當處理時間3秒時約降至10°左右。水滴角隨功率上升而下降。處理時間兩分鐘、頻率20 MHz、10 MHz、流量15 sccm、holder距離電極8.5 cm之氧氣、空氣電漿，在100W時，甚至可達到15°。

The application of plasma is very common in industry, like film deposition, etching, cleaning, bacteria killing, surface modification, and so on. In the field of plasma cleaning, it's often used for removal of carbon contaminant when using electron microscope. Therefore, we want to develop a plasma source with high density to have a good effect on plasma cleaning. At the same time, we made a frequency-varied power amplifier which ranges from 10 to 20 MHz to do some experiments for observing some frequency effects on hollow cathode plasma source. In experiments, I used Langmuir probe to measure some basic plasma characteristics of argon plasma and use high-voltage probe and current transformer to measure the characteristics of discharging of argon plasma. By the results of these measurements, we can know more about the mode transition of a hollow cathode. After knowing the characteristics of a hollow cathode, we measured the characteristics of plasma of oxygen and air, and applied to plasma cleaning of PVC and observed the effects on plasma cleaning.

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