本研究主要以熱燈絲化學氣相沉積法輔以自製硬陽極氧化鋁模板，製作規則鑽石奈米針尖陣列，並且藉由不同的模板，調整針尖間距，量測其場發射特性，討論是否有遮蔽效應存在。過程中以掃描式電子顯微鏡檢測檢測試片表面形貌、拉曼光譜儀檢測鑽石特性及以場發射量測儀檢測鑽石針尖陣列場發射性質。
特別的地方在於，本研究首創利用硬陽極氧化鋁板之阻障層成長鑽石針尖陣列，相較於以孔洞陣列製作出的結構，高度與規則度更為一致。由於鑽石難以於氧化鋁模板上成核成長，研究中配合以聚乙烯亞胺附著鑽石粉末之輔助成核方法，成功地製作出創新三角錐形針尖，其尖端半徑為15~30奈米，高度約為100~200奈米，針尖間距介於50~300奈米之間。
最後的場發射量測結果顯示，本研究所製作的創新三角錐形鑽石針尖結構，針尖間距與高度比於0.25~1的時候，有最佳的場發射起始電場(5.4 V/μm)，其最大場發射電流密度值為8.4 μA/cm2，並且證實在此種結構下能避免過去奈米碳管研究所無法避免的場遮蔽效應。

Screening effect of field emission on the diamond nano-tip array with different pitches is investigated. The diamond nano-tip arrays are formed by hot-filament chemical vapor deposition (HFCVD) on aluminum oxide (AAO) template. The AAO template is fabricated by hard anodization. Compared with moderate anodization, there are many advantages for using hard anodization, such as fast growing and high regularity. The nano diamond particles are adhered onto the AAO template by Polyethylenimine pretreatment to increase the nucleation density of diamond. The diamond film is then deposited on the barrier layer of AAO template by HFCVD method. The diamond tips array is developed after removal of AAO template by wet chemical etching. The field emission effect with different nano-tip arrays are measured by field emission meter. The morphology and quality of diamond nano-tip array are examined by scanning electron microscopy (SEM) and Raman spectroscopy, respectively. The innovative triangular pyramidal structures are obtained successfully with tip radius of about 15 nm-30 nm, and height of 100 nm-200 nm at different pitches from 50 nm to 300 nm. As a result, the lowest turn-on voltage of 5.4 V/μm and highest field emission current density of 8.4 μA/cm2 can be obtained at the smallest pitch- height ratio of 0.25-1 without screening effect in the current study.

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