本研究主要目的乃探討在熱裂解化學氣相沉積法中，如何調控參數，以成長具方向性排列的奈米碳管。使用的碳源前趨物為甲烷及乙炔，催化劑薄膜乃利用磁控濺鍍機鍍製，Fe0.8Co0.2、Fe、Co、Ni四種等不同催化劑薄膜。鍍膜時，控制膜厚為5 nm及10 nm，之後再利用熱處理時，通入還原氣氛Ar/H2(10%)混和氣氛，活化形成奈米尺寸的催化劑顆粒。利用鍍膜條件控制膜厚，配合還原熱處理時氣氛、壓力、以及溫度的調控，可得粒徑細小的顆粒以催化奈米碳管的成長。實驗中發現，Fe、Co、Ni三種過渡金屬元素中，鐵的效果最佳，在800 ℃下成長時，可得到大面積且排列良好的奈米碳管薄膜。
本研究亦探討外加電場對碳管成長時方向性的影響，實驗結果發現，在120 V/ 5.05 mm的微小電場下，即可促使碳源(C+、C-)沉積時平行電場方向，也使碳管成長時克服熱擾動而平行電場向上成長，因此，在沒有立體障礙的效應下，亦可利用電場輔助製程控制奈米碳管成長方向。

Multiwalled carbon nanotubes were grown vertically on catalytic nanoparticles(Fe、Co、Ni、Fe0.8Co0.2) through the thermal chemical vapor deposition process by pyrolyzing of acetylene and with the mixture of argon(90%)/hydrogen(10%) in the temperature range of 700-900 ℃. The nanoparticles were formed uniformly on the Si/SiO2 substrates after heat treatment of the catalytic films which were pre-deposited by DC sputter on the substrates. High-density aligned carbon nanotubes (CNTs) were synthesized on the iron (Fe) film and the cobalt (Co) film in this work. It was found that the average length and the average diameter of the fabricated CNTs were in the range of 20-50μm and 10-30 nm, respectively. The height of the nanotubes array can be controlled by the deposition period and the processing parameters such as the flow rate of acetylene, pressure, temperature, and the condition of electric field. Images of scanning electron microscopy revealed that the CNT film formed after deposition for 1-5 minutes. This work demonstrated that the area of synthesized CNTs array can extend over several cm2. Moreover, verticality of CNTs on Si and SiO2 substrates are compared and the mechanisms are discussed.

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