本論文的重點是以矽化鍺改變P-channel SONOS的材料與結構，以提升P-channel SONOS的工作效能。在以矽化鍺為通道的部份，主要是將發表於P型浮動閘極快閃記憶體的研究應用於P-channel SONOS，觀察P-channel SONOS在以矽化鍺為表面通道時，調變鍺的含量，其寫入速度與純矽基底的P-channel SONOS之間的差異。另外，由於二氧化矽與矽化鍺之間介面特性不佳，因此引入單晶矽層(Si-cap)改善其介面特性，我們亦觀察引入單晶矽層後P-channel SONOS的工作效能。
除了使用矽化鍺通道來改善寫入速度之外，亦提出矽化鍺汲極的構想應用於P-channel SONOS。我們提出矽化鍺汲極擴充P-channel SONOS以更簡單的製程方式來改善寫入速度，亦提出不同結構的掩埋通道，包括H型及U型，H型掩埋通道乃是期望其能夠改善讀取效能，提升讀取電流以達到省電的效能，而U型掩埋通道除了擁有H型掩埋通道優點之外，其在製程的方式則較為簡單。
最後，我們亦對P-channel SONOS捕捉層內的電子分佈情形，以不同的偏壓條件以及不同的元件尺寸作探討。提出汲極偏壓較大的反向局部化(Reverse Localization)寫入方式，用以加大雙位元操作時所需的臨界電壓窗口，使其執行雙位元操作的效果更佳。

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