藉由使用超高真空分子束磊晶技術成長高介電常數氧化鋁薄膜於砷化銦鎵/砷化鎵基板，已經成功的證明此材料能有效鈍化砷化銦鎵半導體表面。我們利用高溫與室溫兩種的氧化鋁成長溫度分別製作閘極介電氧化層，實驗證明此氧化層即使升溫到攝氏800至850度仍然具有良好的熱穩定性，並由其所製作出來的金氧半電容元件也呈現優良的電性。由高解析穿透式電子顯微鏡的分析中可以得知，氧化層與半導體之間具有很明顯的界面，代表沒有任何的界面層於此處形成。在經過攝氏850度及氦氣環境下做快速退火處理的金氧半電容元件，在電性量測上具有良好的電容電壓特性，並計算此條件下的氧化鋁介電常數為8.1，及在閘極偏壓為平帶電壓減1伏特下所量測到的閘極到基板漏電流密度為1.2x10-4 A/cm2。由非臨場角度解析X光光電子能譜分析儀的分析可得知，在未退火處理的試片中並未發現氧化砷的存在，但偵測到有金屬態的鎵原子存在於氧化層之中，推測其可能對電性會造成一定程度的影響。此外，此系統下的費米能階在能帶中是能自由移動的，此特性對於砷化銦鎵金氧半場效應電晶體的運作上是相當關鍵且不可或缺的。

Molecular beam epitaxy (MBE) grown high κ dielectric Al2O3 film on In0.2Ga0.8As/ GaAs substrate, has been demonstrated an effective passivation for InGaAs surface. Utilizing the high-temperature and room-temperature growth methods for the oxide deposition, both the MOS capacitors reveal excellent electrical properties and good thermal stability up to 800-850oC. A sharp oxide/semiconductor interface without the interfacial layer formation was observed by the high-resolution transmission electron microscope (HR-TEM) analysis. Well behaved capacitance-voltage (C-V) characteristics of the MOSCAPs after rapid thermal annealing (RTA) to 850 °C under helium ambience, with the κ value of 8.1, a leakage current density of 1.2x10-4 A/cm2 at Vfb -1V was obtained. From the ex-situ angular-resolved X-ray photoelectron spectroscopy analysis, there is no arsenic oxide, but extra elemental gallium is existed in the oxide films for the as-grown sample, this would be acted as an important factor to influence the C-V behavior. Moreover, the Fermi level at the oxide/InGaAs interface was unpinned, critical for inversion-channel InGaAs MOSFET.

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