研究生: |
楊宗潾 |
---|---|
論文名稱: |
混合粉末法合成Si/SiOx核殼奈米線 The Synthesis of Si/SiOx Core-shell Nanowires via Mixing Powder Method |
指導教授: | 林樹均 |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2008 |
畢業學年度: | 96 |
語文別: | 中文 |
論文頁數: | 96 |
中文關鍵詞: | 奈米線 、核殼結構 、電阻率 、矽 |
相關次數: | 點閱:2 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本實驗是以單區水平爐管加熱,並通入Ar + 10 % H2的催化氣體,以熱蒸發法成長奈米線。實驗方式是將SiO與Sn粉混合放入爐管中加熱,粉末反應溫度設定為1350 °C。隨著基板擺放的遠近,沉積溫度會有所改變,得到的奈米線結構因此不同。成長出的奈米線為氧化矽非晶外層包覆著矽單晶的核殼 ( core-shell ) 結構。試片沉積奈米線前,會先沉積一層氧化層,其厚度與溫度、位置有關。我們並且推測了氧化層及奈米線的成長機制。光學性質方面,CL量測結果發現在光譜圖452 nm ( 藍光 ) 與624 nm ( 紅光 ) 處有峰值,也可望在發光元件上有應用。電阻率的量測則發現其電阻率值與理論值接近。
1. 蔡健民, “以奈米粉體強化之高性能高分子PEEK製程與機械性質分析”, 國立中山大學材料科學研究所碩士論文, ( 2003 )
2. S. Iijima, Nature, 354, 56, ( 1991 )
3. R. Tenne, L. Margulis, M. Genut, and G. Hodes, Nature, 360, 444, ( 1992 )
4. Y. Feldman, E. Wasserman, D. J. Srolovitz, and R. Tenne, Science, 267, 222, ( 1995 )
5. N. G. Chopra, R. J. Luyken, K. Cherry, V. H. Crespi, M. L. Cohen, S. G. Louie, and A. Zettl, Science, 269, 966, ( 1995 )
6. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett., 4, 89, ( 1964 )
7. P. Yang, Y. Wu, and R. Fan, Int. J. Nanoscience, 1, 1, ( 2002 )
8. Y. Wu and P. Yang, J. Am. Chem. Soc., 123, 3165, ( 2001 )
9. W. S. Shi, H. Y. Peng, N. Wang, C. P. Li, L. Xu, C. S. Lee, R. Kalish, and S. T. Lee, J. Am. Chem. Soc., 123, 11095, ( 2001 )
10. N. Wang, Y. H. Tang, Y. F. Zhang, C. S. Lee, I. Bello, and S. T. Lee, Chem. Phys. Lett., 299, 237, ( 1999 )
11. B. Lewis, J. Crystal Growth, 21, 29, ( 1974 )
12. R. Q. Zhang, Y. Lifshitz and S. T. Lee, Adv. Mater., 15, 7, ( 2003 )
13. K.-H. Lee, S. W. Lee, R. R. Vanfleet and W. Sigmund, Chem. Phys. Lett., 376, ( 2003 )
14. P. Yang and C. M. Lieber, Science, 273, 1836, ( 1996 )
15. Z. L. Wang, R. P. Gao, Z. W. Pan and Z. R. Dai, Adv. Eng. Mater., 3, 657, ( 2001 )
16. Z. R. Dai, Z. W. Pan and Z. L. Wang, Solid State Commun., 118, 351, ( 2001 )
17. Y. Q. Zhu and W. H. Hsu, J. Mater. Chem. 8, 1859, ( 1998 )
18. Y. Q. Zhu and W. H. Hsu, Adv. Mater., 11, 844, ( 1999 )
19. Z. J. Zhang and G. Ramanath, Adv. Mater., 13, 197, ( 2001 )
20. Z. J. Zhang, P. M. Ajiayan and G. Ramanath, Appl. Phys. Lett.,78, 3794, ( 2001 )
21. Z. L. Wang, R. P. Gao, J. L. Gole and J. D. Stout, Adv. Mater., 12, 1938, ( 2002 )
22. B. Zheng, Y. Y. Wu and P. D. Yang, Adv. Mater., 14, 122, ( 2002 )
23. Z. W. Pan, Z. R. Dai, C. Ma, and Z. L.Wang, J. Am. Chem. Soc., 124, 1817, ( 2004 )
24. G. Lian, and E. C. Dickey, Appl. Phys. Lett., 79, 10, ( 2001 )
25. 謝嘉民, 賴一凡, 林永昌, 枋志堯, 奈米通訊雜誌, 146, 39, ( 2005 )
26. M. Takakura, S. Notoya, and H. Takahashi, “Application of Cathodoluminescence to EPMA”, JEOL Inc. Technical Note.
27. 黃宏勝, 林麗娟, 工業材料雜誌, 201, 99, ( 2003 )
28. 汪建民,“ 材料分析 ”,中國材料科學學會, ( 1998 )
29. 陳品孜,“以錫為催化劑來製備SiOX及Si奈米線及其性質研究”,國立清華大學材料科學與工程研究所碩士論文, (2007 )
30. 網路資源:http://www.cerac.com/pubs/proddata/sio.htm
31. H. Y. Peng, Z. W. Pan, L. Xu, X. H. Fan, N. Wang, C. S. Lee and S. T. Lee , Adv. Mater., 13, 317, ( 2001 )
32. S. Sharafat and N. M. Ghoniem, "Comparison of Properties of Sn, Sn-Li, Li, and Pb-Li", University of California at Los Angeles (UCLA)
33. G. Kim , Y. H. Tang, T. K. Sham and S. T. Lee, Can. J. Chem., 85, 695, (2007).
34. F. M. Kolb, H. Hofmeister, R. Scholz, M.Zacharias, U.Gosele, D. D. Ma and S. T. Lee, J. Electrochem. Soc. , 151, 472, ( 2004 )
35. D. P. Yu, Z. G. Bai, Y. Ding, Q. L. Hang, H. Z. Zhang, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, H. T. Zhou, and S. Q. Feng, Appl. Phys. Lett., 72, 26, ( 1998 ).
36. J. Liu, J. Niu, D. Yang, M. Yan, and J. Sha, Physica, 23, 221, ( 2004 ).
37. Iqbal, and S. Veperk, J. Phys. Cond. Matter, 15, 377, ( 1982 )
38. Z. Sui, P. P. Leong, I. P. Herman, G. S. Higasni, and X. Temkin, Appl. Phys. Lett., 60, 2085, ( 1992 )
39. D. Nesheva and J. Optoelectron. Adv. Mater., 7, 185, ( 2005 )
40. H. Campbell and P. M. Fauchet, Solid State Commun., 58, 739, ( 1986 )
41. M.Dovrat, N. Arad, X. H. Zhang, S. T. Lee, and A. Sa`ar, Phy. Rev. B, 75, 205343, ( 2007 )
42. X. H. Sun, N. B. Wong, C. P. Li, S. T. Lee, and T. K. Sham, J. Appl. Phys., 96, 3447, ( 2004 )
43. J. Qi, J. M. White, A. M. Belcher and Y. Masumoto, Chem. Phys. Lett., 372, 763, ( 2003 )
44. H. Nishikawa, T. Shiroyama, R. Nakamura, and Y. Ohki, Phys. Rev. B, 45, 586, ( 1992 )
45. S. M. Sze, “ Semiconductor Devices ” , John Willy& Sons, 53, ( 2001 )
46. R. A. Serway, “ Principles of Physics ”, Saunders College Pub, 602, ( 1998 )