此實驗分為兩部分，第一部分為低比例(<1at %)鋰摻雜之氧化鋅薄膜，探討退火溫度、退火氣氛以及摻雜濃度對電性、表面形貌、結晶性質以及光譜的影響；第二部分則用水熱法製作氧化鋅摻雜鋰的一維奈米結構，並作NWFET (Nanowire Field Effect Transadelistor)單根奈米線的電性探討。
第一部分實驗，主要利用溶膠-凝膠法(Sol-gel method)，在玻璃基板上，以2500rpm旋轉塗佈(spin-coating)鍍製膜厚控制在200奈米左右的氧化鋅薄膜，探討鋰離子濃度及溫度熱處理的效應。
XPS量測結果顯示出， 0.5%、550OC利於p-type性質。 而在霍爾量測可以發現到隨著濃度的變小，電阻率有明顯的下降趨勢，且在0.25%會發現到相較於純氧化鋅薄膜有更小的電阻率；在550 OC之 0.5%有最佳的p-type性質，電洞載子濃度1.19x1016cm-3，電阻值55.92 Ωcm，載子遷移率為1.82 cm2/V•s。而在500OC、600OC傾向於n-type性質。
由電性量測，將0.5% 550 OC試片再鍍上純氧化鋅薄膜做均質介面電性測試，在I-V圖形中也可以發現到有pn-juction 電流整流效應。證明所鍍製出來的薄膜確實為p型半導體。
第二部分實驗，則是氧化鋅奈米柱摻雜鋰實驗，比照文獻[80]利用控濺鍍法在矽基板鍍上一層約200奈米的鎵摻雜氧化鋅種子層(GZO)，接著利用水熱溶液法(0.01M的HMT和Zn(NO3)2)成長鋰摻雜氧化鋅奈米柱0.03M鋰摻雜3小時，最後將試片置入爐管退火，以環境溫度500OC、氧氣氛下退火。在此討論前段為後以每階12小時，六階段的連續製程方式製作成奈米線；後段則是改變水熱法生長環境因素，固定摻雜比例，改變前驅物濃度下做鋰摻雜的探討，過程固定12小時生長時間。隨後將兩製成的奈米柱做後續製成單根奈米線場效電晶體(NWFET)元件，探討單根奈米線的性質。
實驗結果討論，以多階段連續製程方式，製作成的摻雜鋰的氧化鋅奈米線，其長寬比有上升的趨勢，並保存了原本的形貌；而在條件B條件下的奈米柱，長寬比大幅度增加，剛性下降垂直性下降，頂端呈現針錐狀。
由XPS結果顯示，72小時多階段製程的缺陷化學比例與3小時製程的差異性不大，推測72小時也有類似性質；前驅物調變，條件B中比較起來有更好的缺陷化學比例，推測條件B除了表面形貌的改變外，有摻雜效率的提升。製成NWFET元件作電性量測，由於電極選用白金在I-V圖，電極接面為schottky contact；而由Id-Vd圖可以發現到，說明兩條件下單根奈米柱的形式較類似於n型通道的形式。

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