本文研究題目為探討GaAs/AlGaAs異質結構的二維電子氣系統中在微波能量激發下的電性量測方法的電子自旋共振(Electrically detected electron spin resonance, EDESR)現象。實驗量測是在溫度T=2.2K、磁場0-6 Tesla的環境條件下進行，藉由觀察二維電子氣系統中Shubnikov-de Hass振盪圖形對於微波頻率以及微波功率調變而造成的影響。在實驗中除了電子自旋共振的訊號之外，在低磁場區域可以觀察到非共振的訊號反應，由於電子吸收微波能量使得電子溫度增加，此非共振訊號的振盪圖形與未加微波照射的Shubnikov-de Hass振盪圖形相位相差180度。當磁場量值增加至B = 2.4 - 2.6 T，在藍道填滿因子(Landau filling factor)為ν = 4的磁場區域附近，當外加微波能量功率增加至1mW後可觀察到原先的Shubnikov-de Hass振盪尖峰旁出現另一振盪尖峰，隨著外加微波能量功率增加，振盪尖峰振幅有增大的現象。前者以電子的輻射熱效應(Bolometric effect)解釋，後者則為電子在邊緣能態(Edge states)與主體能態(Bulk states)之間的平衡關係有關。電子自旋共振訊號部分，以不同的微波頻率照射激發下，已經成功地使用雙重鎖相放大器量測方法(Double lock-in technique) 量測光電訊號△Rxx。在微波頻率18.0GHz激發下，藍道填滿因子ν=3的附近位置觀察到電子自旋共振效應的微小訊號，然而在其他微波頻率激發下並未明確觀察到電子自旋共振的訊號。

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