摘 要
以金屬催化非晶矽薄膜結晶化的方法來製作低溫複晶矽薄膜近來受到廣泛的研究，但是所有的論文大都只有探討以金屬催化側向結晶法所得之複晶矽薄膜的品質，但並未提到高溫退火對其造成的影響，且由於低溫的限制，故以金屬催化非晶矽薄膜結晶化的方法製作之低溫複晶矽薄膜，其品質並不能滿足於許多方面的應用，在本論文中我們發現在金屬催化側向結晶製程後，再加上一段短時間之高溫退火，複晶矽薄膜的結晶性及晶粒尺寸會明顯的增加。

在第一部分，我們將討論金屬催化側向結晶之複晶矽薄膜進行二次高溫退火之效應，由拉曼光譜的分析，我們發現隨著二次高溫退火溫度的提升，複晶矽薄膜的結晶性可以被明顯的改善；由電子顯微鏡的影像，我們發現過高溫二次退火，金屬催化側向結晶之複晶矽薄膜中的針狀結構晶粒，會產生接合效應而形成大尺寸之晶粒；這些效應可能是因為複晶矽薄膜產生二次晶粒再結晶所造成，最後我們將提出能的模型來解釋複晶矽薄膜產生二次晶粒再結晶的現象。

在第二部分，我們將利用臨場曲率量測系統來比較金屬催化側向結晶及金屬催化側向結晶後之高溫退火之應變變化，在本研究中討論到曲率的變化及應力溫度關係的趨勢，我們發現金屬催化非晶矽薄膜結晶化時，基板曲率朝著減小的趨勢；另一方面，對金屬催化側向結晶之複晶矽薄膜進行二次高溫退火時，基板曲率變化將朝著增加的趨勢，另外，我們亦發現金屬催化側向結晶製程的溫度及金屬催化側向結晶之複晶矽薄膜二次高溫退火的溫度亦會明顯的影響基板曲率變化的趨勢。最後我們將根據這些實驗結果提出可能的解釋。

Abstract
Low temperature polycrystalline silicon thin films fabricated by metal induced crystallization method have been widely studied. But all related papers just discuss the effects of MILC method on the quality of poly-Si. Due to the limitation of low temperature, the quality of the poly-Si thin films cannot satisfy certain application. In this thesis we have discovered that by applying high temperature annealing to amorphous silicon with metal-induced-crystallization (MILC) treatment, the grain size and crystallinity of the resulting silicon can be significantly enhanced.

In first section, we will discuss the phenomenon of the post high-temperature annealing on the MILC poly-Si thin films. From the Raman analyses, we have found that the crystallinity of poly-Si can be significantly improved with the increasing of the post-MILC annealing temperature. From the TEM images, we have found that after the post high-temperature annealing, the needle-like grains of MILC poly-Si thin films will be merged and the larger grains can be formed. These effects are due to the secondary grain growth of the poly-Si thin films. Finally, we established a possible model to explain the phenomenon of the secondary grain growth of MILC poly-Si.

In the second section, we employ the in situ curvature measurement system to compare the strain variation between MILC and post-MILC annealing. The transition of stress curvature and the tendency of stress V.S. temperature relation have been examined in this study. We have found that the stress curvature of the substrate decreased during the MILC of a-Si thin film. On the other hand, the stress curvature of the substrates with the MILC poly-Si thin films increased during the post MILC annealing, In addition, the thickness of a-Si for MILC and the temperature of post-MILC annealing affect the curvature transition in the substrate. Finally, we also propose possible explanations of those effects.

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