在高速、高密度的光纖通訊系統中，單石化砷化銦鎵檢光器陣列，相較於複合式陣列，提供更一致、更可靠的檢光器特性以及較低廉的生產成本。而其中邊緣入射型檢光器，在與邊緣發射型雷射或波導整合時，比起傳統面入射型檢光器，可採用更簡易的整合方式，因而得以進一步降低整體成本。然除受磊晶品質、元件製程影響外，邊緣入射型檢光器的光入射面尚易受元件後續處理所影響，諸如劈裂、鍍抗反射層，以至於儲放環境等。是以此類陣列的實現，隨著陣列中的檢光器數目增加而大幅趨於困難。截至目前，相關文獻以至於技術上的資訊因而十分稀少。
本研究將計畫以有機金屬氣相沈積技術成長高品質磊晶結構，並已現有檢光器前續製程，搭配將研發之光耦合面處理製程，以砷化銦鎵邊緣耦合型p-i-n檢光器陣列為研製目標。

As wide-bandwidth, high-capacity communications via optical fiber is demanded, high-speed optoelectronic devices for message transmission and reception play major roles in promoting overall system performances. In this dissertation, InGaAs edge-coupled photodiodes (EC-PDs) with a light funnel integrated (LIFI) in front of the coupling aperture, called LIFI EC-PD, have successfully fabricated based on the self-terminated oxide polish (STOP), the crystallographic slope etching of InP, and the self-aligned diffusion (SAD) techniques. The LIFI EC-PD presents not only a lower dark current density (~4.4 mA/cm2) but also a higher responsivity (~0.4 A/W) than that of the mesa EC-PD (27 mA/cm2 and 0.26 A/W, respectively). Furthermore, the thick oxide film serves as the funnel in front of active-region aperture to enhance the coupling efficiency and to lower the bonding pad capacitance down to 50 fF. The lowered bonding pad capacitance can be beneficial in designing a device with a higher transit-time-limited frequency response of beyond 30 GHz. The LIFI EC-PD with a 1-µm thick absorption layer exhibits a 3-dB bandwidth of 20 GHz and a responsivity of ~0.4 A/W. A further improved novel high-speed waveguide photodetectors (WGPDs) integrated with a light input tapered-SiOx facet exhibiting extremely low dark current density and high responsivity characteristics of 0.74 A/W from 0.39 A/W of the device without light input tapered-SiOx facet has successfully been developed. The novel WGPDs can have an enlarged coupling aperture with responsivities and reduced dissipative absorption, which result from the reflection of an InP-slope and a p-metal, and thus permit more light to enter its absorption layer. Accordingly, such ground-breaking WGPD, exhibiting a 3-dB bandwidth of 20 GHz with a coupling efficiency of 0.74 A/W at a wavelength of 1.3-μm under 132.5 μW illuminations, can explore a better manufacturing competence.

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