一般成長碳膜必需要低壓下操作，因此需要設真空系統，花費的經濟成本較高且製程上的時間比較長，而本研究發展新型DBD，可降低操作電壓，並利用其在大氣下產生輝光放電，通入氬氣(Ar)與乙炔(C2H2)在不同溫度、氣流量、電壓、頻率下產生含氫非晶類鑽碳膜，與低壓成長碳膜相較程序上較簡便而且操作迅速省時。接著實驗中對電漿放電特性及光譜進行分析，也使用SEM、AFM觀察碳膜表面形貌及FTIR、Raman、ESCA分析化學鍵結的成分並用水滴角量測儀分析表面能變化、鉛筆硬度測試機進行膜硬度測試，以了解碳膜在不同條件下成長，物理與化學性質的變化。

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