本實驗室近期致力於研究N型太陽能電池，如何以最低成本製作高效的N型電池是我們一直想探討的議題，先前實驗室的學長有研究過沒有氧化鋁鈍化層的N型太陽能電池，而我們則是想要在其架構上增添一層氧化鋁鈍化層，觀察效率上的影響。

　　首先，我們使用N型矽基板來製作，先以電子束蒸鍍機蒸鍍一層鋁金屬薄膜，再利用爐管通氧來氧化形成氧化鋁薄膜，隨後分別用爐管與烤箱進行退火。實驗結果是爐管退火的效率最佳，最高可以達到12.99%，與先前學長沒有氧化鋁鈍化層的研究相比高1%左右，而通過烤箱退火後的晶片薄膜品質不佳，導致效率相較於爐管退火的低0.5~1%，推測原因是烤箱打開的過程中，溫度不可控制，以及烤箱不能通入任何氣體，導致退火的過程中會有雜質的產生，影響薄膜的品質。比較退火後的氧化鋁薄膜質量後，取較佳的那組，再觀察正面SiNx厚度所造成的影響，SiNx 92nm的效率相較於SiNx 100nm的較低，推測是氮化矽的厚度會影響到其中氫氣的含量，然而氮化矽的氫能夠降低表面的缺陷。

　　Our laboratory has recently been committed to researching N-type solar cells. How to make high-efficiency N-type solar cells at the lowest cost is a topic we have always wanted to discuss. Previously, senior students in the laboratory have studied N-type solar cells without a passivation layer, and we want to add a passivation layer to its structure and observe the impact on efficiency.

　　First, we use an N-type silicon substrate to make it. First, we use an electron beam evaporation machine to evaporate a layer of aluminum metal film, and then use the furnace tube to pass oxygen to oxidize it to form an aluminum oxide film, and then use the furnace tube and oven to anneal. The experimental result is that furnace tube annealing has the best efficiency, which can reach up to 12.99%. However, the quality of the wafer film after oven annealing is poor, resulting in an efficiency that is 0.5~1% lower than that of furnace tube annealing. It is speculated that the reason is that the oven is turned on. During the process, the temperature cannot be controlled, and no gas can be passed into the oven, resulting in the production of impurities during the annealing process, which affects the quality of the film. After comparing the quality of the annealed aluminum oxide films, select the better group and then observe the impact of the front SiNx thickness. The efficiency of SiNx 92nm is lower than that of SiNx 100nm. It is speculated that the thickness of silicon nitride will affect The hydrogen content in silicon nitride can reduce surface defects.

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