氧化釕(RuO2)為一良好的金屬導電性氧化物，其單晶塊材之室溫電阻率僅有35 μΩ-cm，此外還具有良好的熱穩定性與化學穩定性等優點；基於以上特點，氧化釕有很多潛在的應用。本研究利用固體氧化釕RuO2在高溫含氧環境下，氧化成氣態的RuO3及RuO4，以熱蒸鍍法在低溫處成功製備出線徑主要分佈範圍20~50 nm之氧化釕奈米線，其中奈米線最小的尺寸為15 nm遠超過該材料的費米波長(1.6 nm)，因此評估其仍保有近似塊材之導電性質。
在奈米線的電性量測方面，本實驗著重於以TEM-STM兩點量測技術測量奈米線在室溫時的電性，探討接觸電阻的來源及其造成的影響，並成功地藉由移除表面污染物、增加實際接觸面積與電子束輻照來改善兩介面接觸的問題，使得TEM-STM系統除了具備快速簡單及高解析度之in-situ量測的優點外，其可信度及再現性也因此提昇。RuO2電阻率經由換算為50.5 μΩ-cm；此外，由四點量測系統之電阻對應溫度的變化(R-T curve)可確定氧化釕奈米線具有金屬的行為，且其室溫電阻率為160 μΩ-cm；因此這兩個方法的量測結果皆與氧化釕塊材與薄膜的室溫電阻率相當(35~150 μΩ-cm)。

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