折射率作為最具代表性的光學參數，已經被充分研究。 由於每種物質在特定
波長下的折射率都是唯一的，因此我們得以利用這一特點來辨認特定材料、檢測
物質的純度等。在半導體產業裡，解析在光子能量在20 電子伏特到120 電子伏
特之間的複數折射率。此項技術的需求來源於多層膜鏡子和光罩的需要。因此，
在晶圓和薄膜產業中利用量測極紫外光波段中的折射率來辨認特定材料是必不
可少的。量測折射率有幾種方法，例如：反射測量法、折射測量法、干涉法、橢
偏法。在此論文裡，我們將會來探討在波長35 奈米附近的折射率，利用自行搭
建的極紫外光橢偏儀作為量測系統，接著，我們會將結果和一權威性機構—CXRO
的資料庫中的結果作比較。最後，我們還開發了一種自我驗證的方法，使我們的
量測結果更加可信。

Refractive index being the most representative parameter in the optical
properties has been well studied. Since each material has its unique refractive
index observed at different wavelength, we are capable to identify a particular
material, to check the purity of the substance, etc. In semiconductor industry, it is
sufficient to resolve the complex refractive index at photon energies ranging from
20 eV to 120 eV. It is needed due to the requirement of multilayer mirrors and
optical masks. Therefore, measuring the refractive index in EUV region is vital for
determining a particular substance in industry, e.g., wafer and thin film.
There are several approaches for measuring the refractive index, e.g.,
reflectometry, refractometry, interferometry and ellipsometry. In this thesis, we
will discuss ellipsometry that is used to measure the refractive index at
wavelength of approximately 35 nm with a homebuilt EUV polarimeter, then, we
will compare the result to the result from the database of the prestigious
institute—CXRO. At last, we have developed a method to verify the result done by
ourselves which makes our measurement become more reliable.

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