在相同路徑中傳播時，奈米雷射於傳遞資訊中扮演重要的角色，因其具有高速、低能量損耗及光子間不會互相干擾的特性。在本研究中，我們利用半導體 - 介電層 - 金屬（SIM）結構基於表面電漿極化（SPP）耦合來突破繞射極限。通過化學氣相沉積製造的單根高結晶度氧化鋅奈米線作為增益介質對於在室溫下雷射操作是至關重要的。用作電漿子耦合之奈米腔的二維材料六方氮化硼（h-BN）通過機械剝離製備，並置於奈米線和單晶鋁膜之間。發現SIM結構比沒有SPP效應的單根奈米線具有更優良的光學表現。當光在介電層和金屬基板之間的界面處傳播時，h-BN和鋁膜的高結晶度是降低電漿子損耗的關鍵因素。

Nanolasers play an important role in transmitting messages with high speed, low energy loss and without interruption to each other when propagating in the same path. In this work, a semiconductor-insulator-metal (SIM) structure of ultraviolet nanolaser based on surface plasmon polariton (SPP) breaking through the diffraction limit has been achieved. A gain medium of the single high crystallinity zinc oxide nanowire fabricated by chemical vapor deposition is crucial for laser operating at room temperature. The two-dimensional material, hexagonal boron nitride (h-BN), which acts as the plasmonic nanocavity is prepared by mechanical exfoliation and is placed between a nanowire and the single crystal aluminum film. The SIM structure was found to exhibit higher optical intensity than the single nanowire without SPP effect. The high crystallinity of the h-BN and the aluminum film are both the key factors to decrease the plasmonic losses when the light propagating at the interface between the dielectric layer and the metal substrate.

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