互補式影像感測器光二極體的SPICE模型｜國立清華大學博碩士論文庫

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研究生：	陳虹竹
論文名稱：	互補式影像感測器光二極體的SPICE模型 SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
指導教授：	金雅琴 Ya-Chin King
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2005
畢業學年度：	93
語文別：	英文
論文頁數：	60
中文關鍵詞：	影像感測器、二極體、光電流、模型
相關次數：	點閱：4 下載：0
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本篇論文提出一個互補式金氧半影像感測器光二極體的SPICE模型，此模型可準確模擬出二極體的光電轉換情形。一般採用Bsim 3.3反偏操作的二極體模型並無法正確地模擬出光二極體在反偏操作下的漏電機制，在本篇論文中我們找出為何Bsim 3.3的模擬結果和實際量測結果差異如此大的原因並且加以解決。除此之外，用標準0.35微米CMOS邏輯製程製作不同大小的影像感測器光二極體，從輸出電壓變化的結果萃取出適當可供模擬的參數，最後提出一個數學模型和等效電路。由實驗結果證明，在不同波長和不同照度的光源下，此模型可成功模擬出反偏光二極體的光電流大小。故此篇所提出的光二極體模型不僅可以和影像感測器電路整合在一起進行模擬，所得的結果更可以精確的模擬出實際的情形。

A novel photodiode model which better describes the electro-optical behavior of the CMOS image sensor has been developed. The conventional diode model adopted by Bsim 3.3 suffers from the violation between simulation and measurement results. The sources of the violation are analyzed into details. A novel mathematical model is proposed. By using TSMC 0.35μm CMOS technology, photodiodes with different structures have been fabricated and measured. The results can show the relationship between the diode current and the operation voltage, temperature, photo lux and wavelength, respectively. And the results can be used to extract the relevant parameters. Moreover, the proposed mathematical model and the extracted parameters can provide a precise environment for the diode current simulation.

ABSTRACT………………………………………II
ACKNOWLEGEMENT………………………………IV
LIST OF CONTENTS……………………………V
LIST OF FIGURES………………………………VI
LIST OF TABLES………………………………VIII
CHAPTER ONE :  INTRODUCTION……………………………………1
CHAPTER TWO :  DIODE CURRENT…………………………………3
2.1 Components of Diode Current………………………………3
2.1.1 Dark Current…………………………………………………3
2.1.1.1  Diffusion Current………………………………………4
2.1.1.2  Surface Leakage Current………………………………5
2.1.1.3  Generation-Recombination Current……………………6
2.1.1.4  Band-To-Band Tunneling Current………………………7
2.1.2 Photo Current……………………………………………8
2.2 Dark Current Model Adopted By Bsim 3.3…………………10
2.3 Summary……………………………………………………………13
CHAPTER THREE:  DARK CURRENT MODELING………………………22
3.1 Experimental Results………………………………………22
3.1.1 Test Key………………………………………………………22
3.1.2 Experimental Setup……………………………………………23
3.1.3 Measurement Result……………………………………………23
3.2 Novel Simulation Methodology…………………………………24
3.2.1 Source of the Violation (GMIN) …………………………24
3.2.2 Revised Simulation Model……………………………………25
3.2.3 Dark Current Modeling………………………………………25
3.2.4 Comparison of Measurement and Simulation Results……26
CHAPTER FOUR:  PHOTO CURRENT MODELING………………………43
4.1 Mathematical Model………………………………………………43
4.2 Simulation Result………………………………………………46
4.3 Comparison of Measurement and Simulation Results………46
4.4 Photodiode Simulation Subcircuit……………………………46
CHAPTER FIVE:  CONCLUSION…………………………………………59
REFERENCES……………………………………………………………60

                                

[1.1] Albert J. P. Theuwissen, “CCD or CMOS image sensors for consumer digital still photography? ”, presented at 2001 Int. Symposium on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, Apr. 168-171, 2001
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[1.3] H. S. P. Wong, “CMOS image sensors---Recent advances and device scaling considerations,” in IEEE IEDM Tech. Dig., 1997, pp. 201-204.
[1.4] J. Hynecek, “A new device architecture suitable for high-resolution and high-performance image sensors,” IEEE Trans. Electron Devices, vol. 35, pp.646-652, Mar. 1988.
[1.5]. Wei-Jean Liu; Chen, O.T.-C.; Li-Kuo Dai; Ping-Kuo Weng; Kaung-Hsin Huang; Far- Wen Jih; “A CMOS photodiode model,” Behavioral Modeling and Simulation, pp.102 - 105 Oct. 2001
[2.1] BEN. G.. Streetman, Sanjay Banerjee, Solid State Electronic Devices, 5th ed. NJ:Prentice Hall, 2000.
[2.2] S. C. Ross Wolf, Silicon Processing for the VLSI ERA, Vol. 4: Deep-Submicron Process Technology, Lattice Press 2002.
[2.3] Yuan Taur, Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.
[2.4] L.Ravezzi, G.-F. Dalla Betta, D. Stoppa, A. Simoni,”A versatile photodiode SPICE model for optical microsystem simulation,”ELSEVIER, Microelectronics Journal , pp.277-282, Nov. 1999
[2.5] William Liu, MOSFET Models for SPICE Simulation, Including BSIM3v3 and BSIM4, John Wiley & Sons, 2001.

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