本實驗是以雙靶之射頻磁控濺鍍技術，以LaNiO3/Pt/Ti/SiO2/Si為基板，在鈦酸鋇(BaTiO3)薄膜中鍍製白金(Pt)奈米粒子夾層，形成BTO/Pt/BTO結構，再施以650℃ 3min的爐管熱處理。試著探討Pt在不同的含量、不同的anneal時間、及不同的鍍膜溫度下，對BTO薄膜特性之影響。
當金屬粒子在均勻的電場下時，經電磁學的推導可知粒子上下方的電場強度是原電場的三倍，因而可使反向domain的成核、縱向成長及橫向擴張更為容易，Pr及Ec都會增加，使P-E curve放大。

由實驗結果得知，經熱處理後的BTO薄膜，其BTO(100)、(200)的繞射峰強度減弱，且介電常數下降，這可能是因為熱處理的過程中薄膜產生的多邊形化(polygonization)，而出現其他方位的指向，使原本完美的texture消失。

當固定Pt的anneal時間為2min時，在Pt鍍製30s的情況下可以得到較大的Pr、Ec值，其熱處理後的2Pr≒6μC/cm2、2Ec≒300kV/cm (在電壓為16V下)。固定Pt鍍膜時間30 s，當Pt夾層anneal 2 min，或是在255℃下鍍製Pt時，也可以得到較佳的P-E特性。因為在這些條件下，適當Pt的數量及大小對於局部電場集中的效應最為明顯，而使Pr及Ec增加。

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