研究生: |
林鴻馨 Lin, Hung-Hsin |
---|---|
論文名稱: |
Measurement of the Linewidth Enhancement Factor of Quantum Dot Lasers by Four-Wave Mixing Analysis |
指導教授: |
林凡異
Lin, Fan-Yi |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies |
論文出版年: | 2010 |
畢業學年度: | 98 |
語文別: | 英文 |
論文頁數: | 41 |
中文關鍵詞: | 量子點 、半導體雷射 、四波混頻 |
相關次數: | 點閱:3 下載:0 |
分享至: |
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The linewidth enhancement factor (α-factor) of semiconductor quantum dot laser
has been widely investigated and measured in recent years. The pubilished methods of
measuring the α-factor are focus on the α-factor only, ignoring other intrinsic parameters
of semiconductor lasers. These intrinsic parameters of lasers are much dependent on
determine the characteristics of the laser nonlinear dynamic. Therefore, we apply the
four-wave mixing analysis on quantum dot lasers both numerically and experimentally.
Through the four-wave mixing analysis, we can not only obtain the α-factor but also
other intrinsic parameters.
By analyzing the four-wave mixing state of quantum dot lasers, we derive and obtain
the relation between optical spectra of the regenerated signal versus detuning and power
spectra of four-wave mixing state versus dteuning, respectively. Fitting the experimental
result with those derived from the relations, the α-factor and intrinsic parameters can be
obtained.
From the experimental result, it is found that the appearance of the optical spectra
of quantum dot lasers is different from that of quantum well lasers . Through numerical
analyzing, the difference is found resulting from the larger value of the differential gain
and carrier decay rate. The α-factor extracted from the fitting result is also compared to
that obtained by injection locking technique, which show similar values. Therefore, using the four-wave mixing analysis to measure the linewidth enhancement factor of quantum dot lasers is shown to be reliable.
[1] C. H. Henry, ”Theory of the Linewidth of Semiconductor Lasers,” IEEE J. Quantum
Electronics, vol. QN1-8, no. 2, pp. 259-264, 1982.
[2] S. Melnik, G. Huyet, and A. V. Usko, ”The Linewidth Enhancement Factor α of
Quantum Dot Semiconductor Lasers,” Opt. Exp., vol. 14, no. 7, pp. 2950-2955,
2006.
[3] M. Osi ´N ski, and J. Buus ”Linewidth Broadening Factor in Semiconductor Lasers -
An Overview,” IEEE J. Quantum Electronics, vol. QE-23, no. 1, pp. 9-29, 1987.
[4] H. Diwu, and B. Arda, ”Quantum Dot Lasers,” Quantum Dot Lasers, ECE 580-Term
Project
[5] D. O’Brien, S. P. Hegarty, and A. V. Usko, ”Sensitivity of Quantum Dot Semiconductor
Lasers to Optical Feedback,” Opt. Lett., vol. 29, no. 10, pp. 1072-1074,
2004.
[6] D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M.
Ustinov, ”InGaAs-GaAs Quantum-Dot Lasers,” IEEE J. Selected Topics Quantum
Electronics, vol. 3, no. 2, pp. 196-205, 1997.
[7] B. Dagens, A. Markus, J. X. Chen, J. G. Provost, D. Make, O. Le Gouezigou, J. Landreau,
A. Fiore, and B. Thedrez, ”Gain Linewidth Enhancement Factor and Purely
Frequency Modulated Emission from Quantum Dot Lasers,” Electronics Letters, vol.
41, no. 6, 20057956, 2005.
[8] F. Grillot, B. Dagens, J. G. Provost, H. Su, and L. F. Lester, ”Gain Compression and
Above-Threshold Linewidth Enhancement Factor in 1.3 μm InAs-GaAs Quantum
Dot Lasers,” IEEE J. Quantum Electron., vol. 44, no. 10, pp. 946-951, 2008.
[9] D. Y. Cong, A. MArtinez, K. Merghem, G. Moreau, A. Lemaˆitre, J. G. Provost,O. Le
Gouezigou, M. Fischer, I. Krestnikov, A. R. Kovsh, and A. Ramdane, ”Optimisation
of α-Factor for Quantum Dot InAs/GaAs Fabry-Perot Lasers Emitting at 1.3μm,”
Electron Letters, vol. 43, no. 4, 20073633, 2007.
[10] A. A. Ukhanov, A. Stintz, P. G. Eliseev, and K. J. Malloy, ”Comparison of the Carrier
Induced Refractive Index, Gain, and Linewidth Enhancement Factor in Quantum
Dot and Quamtum Well Lasers,” Appl. Phys. Lett., vol. 84, no. 7, pp. 1058-1060,
2004.
[11] S. K. Hwang, and D. H. Liang, ”Effects of Linewidth Enhancement Factor on Period-
One Oscillations of Optically Injected Semiconductor Lasers,” Appl. Phys. Lett., vol.
89, 061120, 2006.
[12] S. Gerhard, C. Schilling, F. Gerschutz, M. Fischer, J. Koeth, I. Krestnikov, A.
Kovsh, M. Kamp, S. Hofling, and A. Forchel, ”Frequency-Dependent Linewidth
Enhancement Factor of Quantum-Dot Lasers,” IEEE Phot. Tech. Lett., vol. 20, no.
20, pp. 1736-1738, 2008.
[13] T. Fordell, and˚A. M. Lindberg ”Experiments on the Linewidth- Enhancement Factor
of a Vertical-Cavity Surface-Emitting Laser,” IEEE J. Quantum Electron, vol. 43,
no. 1, pp. 6-15, 2007.
[14] R. Hui, A. Mecozzi, A. D’Ottavi, and P. Spano, ”Novel Measurement Technique of
α Factor in DFB Semiconductor Lasers by Injection Locking,” Electron Letters, vol.
26, no. 14, pp. 997-998, 1990.
[15] I. Petitbon, P. Gallion, G. Debarge, and C. Chabran, ”Locking Bandwidth and Relaxation
Oscillations of an Injection-Locking Semiconductor Laser,” IEEE J. Quantum
Electron., vol. 24, no. 2, pp. 148-154, 1988.
[16] K. Iiyama, K. I. Hayashi, and Y. Ida, ”Simple Method for Measuring the Linewidth
Enhancement Factor of Semiconductor Lasers by Optical Injection Locking,” Opt.
Lett., vol. 17, no. 16, pp. 1128-1130, 1992.
[17] S. K. Hwang, J. M. Liu,and J. K. White, ”Characteristics of Period-One Oscillations
in Semiconductor Lasers Subject to Optical Injection,” IEEE J. Selected Topics
Quantum Electronics, vol. 10, no. 5, pp. 974-981, 2004.
[18] S. K. Hwang, and J. M. Liu, ”Dynamical Characteristics of an Optically Injected
Semiconductor Lasers,” Opt. Commun., vol. 183, pp. 195-205, 2000.
[19] J. M. Liu, and T. B. Simpson, ”Four-wave mixing and optical modulation in a
semiconductor laser,” IEEE J. Quantum Electron., vol. 30, pp. 957-965, 1994.
[20] H. Nakajima, and R. Frey, ”Intracavity Nearly Degenerate Four-Wave Mixing in a
GaAlAs Semiconductor Laser,” Appl. Phys. Lett., vol. 47, pp. 769-771, 1985.
[21] D. Goulding, S. P. Hegarty, O. Rasskazov, S. Melinik, M. Hartnett, G. Greene,
J. G. McInerney, D. Rachinskii, and G. Huyet, ”Excitability in a Quantum Dot
Semiconductor Laser with Optical Injection,” Phys. Rev. Let., vol. 98, 153903, 2007.
[22] M. Sugawara, N. Hatori, H. Ebe, M. Ishida, Y. Arakawa, T. Akiyama, K. Otsubo,
and Y. Nakata, ”Modeling Room-Temperature Lasing Spectra of 1.3 μm Self-
Assembled InAs/GaAs Quantum-Dot Lasers: Homogeneous Broadening of Optical
Gain under Current Injection,” J. Appl. Phys. Lett., vol. 97, 043523, 2005.
[23] M. Gioannini, A. Sevega, and I. Montrosset, ”Simulation of Differential Gain and
Linweidth Enhancement Factor of Quantum Dot Lasers,” Optical and Quantum Electronics,
vol. 38, pp. 381-394, 2006.