本實驗研究重點在於製備二氧化釩(Vanadium Dioxide)奈米線及其性質量測。由於我們實驗腔體內的真空度偏低(約為0.4torr~4torr)，因此學生嘗詴是否可直接利用腔體內的殘留氧氣參與製備氧化物奈米結構，所以學生利用反應性高的三氯化釩(VCl3)當做前驅物，升溫至300℃蒸發成氣體再經由載流氣體(carrier gas)運送至下流矽基板處，此區塊操作溫度介於900℃至1100℃之間，此時釩原子與腔體中的氧氣反應生成二氧化釩奈米線沉積在矽基板上。
學生利用不同的載流氣體也就是不同的化學氣氛去觀察其奈米線生成的影響，發現通入Pure Ar、Ar 80% + O2 20%、Ar 90% + H2 10%這三種氣體生成的產物形貌不盡相同，且對於溫度及持溫時間對於奈米線的直徑長度比也有些許的相關性。合成的奈米線為長方形柱體其直徑大多座落於30 nm – 300 nm 及長度約為五微米~數十微米之間，長度直徑比約為50-250。
二氧化釩奈米線的形貌用場發射掃描電子顯微鏡(FESEM JSE-6500F)觀察，之後學生再去做ESCA分析，對照工具書以及文獻得出是二氧化釩結構，而晶體結構利用高解析穿透式電子顯微鏡(TEM JEOL JEM-2010及 HRTEM JEOL JEM-3000F)及電子選區繞射(SAED)圖形確認其為二氧化釩單晶結構得到晶面及其成長方向，其成長方向為低指數方向面。
由於二氧化釩其獨特的金屬絕緣體轉換電性(metal-insulator transition，MIT)，我們拿去量測二氧化釩的常溫電性(I-V)以及升溫電性曲線。常溫電性量測我們的二氧化釩奈米線平均電阻率為30.077Ω-cm，屬於半導體範圍。

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