本論文首先介紹微掃描鏡的應用，以消費性電子產品近年的演變切入，探討未來小裝置與大螢幕的趨勢，進而比較目前主流的微投影技術，電磁式微掃描鏡利用羅倫茲力為驅動方式並以無須對焦的雷射作為掃描光源，為了能夠偵測微掃描鏡的振動行為，運用多晶矽材料將壓阻感測器沉積在各扭轉軸上，以利未來接應用在回授電路做振動控制。本晶片使用TSMC 2P4M 0.35μm CMOS製程，將電磁式微掃描鏡結構、感測電路、與控制電路整合於單一個晶片上，晶片總面積為3.5mm ×2.8mm，利用CMOS製程與矽基材本身，將快軸與慢軸設計為不同厚度，如此可大幅縮短慢軸長度，降低結構所占面積範圍，另外針對後製程優化將慢軸設計成格子狀，加速後製程乾蝕刻時間並降低乾蝕刻造成的結構質量誤差，以簡單、低成本的方式開發一套完整的後製流程。對於微掃描鏡結構之量測結果，目前已量測未進行XeF2乾蝕刻的快軸共振頻率為53.8 kHz，慢軸共振頻率為7.6 kHz，並得到與模擬結果一致的動態運作特性。

This thesis introduces the application of scanning micromirror firstly. With the revolution of consumer electronics, people not only want their devices to be equipped with a big screen but also to be compact at the same time. Scanning micromirrors are able to satisfy the needs with a small size and the image projection capability. A electromagnetic scanning micromirror driven by Lorentz force is studied in this work. The projection system uses laser beam as the scanning light source and requires no focusing lens. To monitor the motion of the micro scanning mirror, polysilicon is embedded in each torsional beam as the piezoresistive sensor, which can be used in a feedback loop to initiate oscillation. The integrated chip contains the mechanical structure, sensing circuit, and oscillation circuit and is implemented by using the TSMC 2P4M (two-polysilicon-four-metal) 0.35μm CMOS (Complementary metal oxide semiconductors) process. The chip area is 3.5×2.8 mm2. By designing torsional beams with different thicknesses for fast and slow scans, the length of the latter can be significantly reduced to minimize the scanning mirror size. Etchant holes are placed on slow-axis beams to facilitate the silicon undercut by xenon diflouride. We develop a convenient and low-cost post fabrication process and successfully fabricate the scanning micromirror device. The latest measurement shows the resonant frequencies for fast and slow scans are 53.8 and 7.6 kHz, respectively (without xenon diflouride dry etching), which are close to the simulated values.

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