研究生: |
梁欣雅 |
---|---|
論文名稱: |
First-Principles study on Electronic Structures of II-VI Isovalent Alloy and Mn-doped CdS |
指導教授: | 鄭弘泰 |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
理學院 - 物理學系 Department of Physics |
論文出版年: | 2010 |
畢業學年度: | 98 |
語文別: | 英文 |
論文頁數: | 71 |
中文關鍵詞: | 第一原理 、II-VI族半導體 、稀磁性半導體 |
外文關鍵詞: | first-principles, ab initio, II-VI semiconductors, diluted magnetic semiconductors |
相關次數: | 點閱:2 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
We use plane wave method to study the electronic structure of II-VI semiconductor and Mn-doped CdS. II-VI semiconductors: Zn(x)Cd(1-x)S and CdS(1-x)Se(x) having widely light emitting spectrum are promising materials of light emitting diodes. Mn-doped CdS is material for diluted magnetic semiconductors which is potential spintronics devices. We discuss the concentration dependent physics such as lattice and band gap in Zn(x)Cd(1-x)S and CdS(1-x)Se(x), and the magnetic property in Mn-doped CdS.
[1] P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
[2] W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965).
[3] J. E. Bernard and A. Zunger, Phys. Rev. B 36, 3199 (1987).
[4] J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures
(CAMBRIDGE, 2003).
[5] M. Jain, II-VI SEMICONDUCTOR COMPOUNDS (World Science, 1993).
[6] V. Ladizhansky, V. Lyahovitskaya, and S. Vega, Phys. Rev. B 60, 8097 (1999).
[7] D.H.Kim, D.J.Lee, N.M.Kim, S.J.Lee, and T.W.Kang, J. Appl. Phys 101,
094111 (2007).
[8] C. S. Wang, B. M. Klein, and H. Krakauer, Phys. Rev. Lett. 54, 1852 (1985).
[9] G. Y. Guo and H. H. Wang, Chin.J.Phys. 38, 949 (2000).
[10] M. Cococcioni and S. de Gironcoli, Phys. Rev. B 71, 035105 (2005).
[11] G. Kresse and J. Furthmuller, Vienna Ab-initio Simulation Package
(http://cms.mpi.univie.ac.at/VASP/, 2005).
[12] W. E. Pickett, Computer.Phys.Reports 9, 115 (1989).
[13] D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
[14] P. E. Bl‥ochl, Phys. Rev. B 50, 17953 (1994).
[15] C.-Y. Moon, S.-H. Wei, Y. Z. Zhu, and G. D. Chen, Phys. Rev. B 74, 233202
(2006).
[16] F. S‥okeland, M. Rohlfing, P. Kr‥uger, and J. Pollmann, Phys. Rev. B 68,
075203 (2003).
[17] O. Madelung, SEMICONDUCTOR: Data Handbook (Springer, 2003).
[18] V. Kumar, V. Singh, S. K. Sharma, and T. Sharma, Optical Materials 11, 29
(1998).
[19] I. Akyuz, S. Kose, F. Atay, and V. Bilgin, Materials Science in Semiconductor
Processing 10, 103 (2007).
[20] G. Perna, S. Pagliara, V. Capozzi, M. Ambrico, and M. Pallara, Solid State
Communications 114, 161 (2000).
[21] M. Ambrico et al., SPIE 3404, 161 (1998).
[22] M. P.Marder, Condensed Matter Physics (John Wiley and SONs.INC, 2000).
[23] C. j. Chen, M. Qu, X. Zhang, F. Lin, and H. B. Hu, J.Appl.Phys 69, 6114
(1991).