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研究生: 吳明峰
Ming Feng Wu
論文名稱: 量測時間延遲和虛擬量測系統對逐批控制之影響分析以及新穎逐批控制技術之推導
Performance analysis of run-to-run controllers subject to metrology delay and virtual metrology and the development novel run-to-run control approach
指導教授: 鄭西顯
S.S. Jang
口試委員:
學位類別: 博士
Doctor
系所名稱: 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年: 2008
畢業學年度: 96
語文別: 中文
論文頁數: 104
中文關鍵詞: 逐批控制EWMA 控制器半導體化學氣相沉積混合產品生產虛擬量測系統逐步迴歸分析共變異數分析時間序例分析
外文關鍵詞: Run-to-Run, Metrology delay, CVD, CuCmp, Mixed-product production, Virtual Metrology, Stepwise Regression, ANCOVA, Time Serise, Semiconductor manufactory, EWMA controller
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  • 本論文主要針對半導體製程生產時所面臨的兩大問題:晶圓量測時間的延遲以及在半導體特有的多量少樣混合產品。根據上述問題,提出修正EWMA控制器使得產品品質可以滿足產品規格。
    首先,我們直接以數學模式來分析量測時間的延遲對控制上的影響,提供一個控制上的指導方針,並且使用VM (Virtual Metrology) 來決解延遲之問題;並且在化學氣相沉積製程中加以分析各個建模方法對VM效果之比較,發現以Stepwise最佳之方法。
    而在混合產品生產的問題,主要是以統計學之方法ANCOVA來解決,利用ANCOVA可以分析出各個產品對機台的特性,加以修正誤差項,來達到提升控制效能和品質。


    Two problems encountered in many semiconductor manufacturing are metrology delay caused by the equipments and mixture products on producing. For this thesis, we develop some controllers to eliminate the influences of two problems.
    First, focusing on the metrology delay problem, we deriver an analytic formula of the performance for a single EWMA controller and provide the guideline to reduce the effects of metrology delay system. Additionally, we provide VM (Virtual Metrology) system to solve it and analyze the performance of VM of modeling methods. Finally, we suggest Stepwise method to plug in VM system.
    Mixed-product production can reduce amount of cost and time in semiconductor manufacturing. However, each product has a different I-O model and it is a big challenge to run-to-run control. In order to solve it, we use an ANCOVA model to deal with the characteristic of mixed products in different platforms, and to correct the modeling error due to mixed products in order to impove the controller performance and quality.

    目 錄 目 錄 I 圖表目錄 III 第 1 章 緒 論 1 1.1 前 言 1 1.2 研究目的與動機 4 1.3 文獻回顧 7 第 2 章 半導體製程中CVD以及CuCMP之介紹 11 2.1化學氣相沉積(Chemical Vapor Deposition,CVD) 12 2.1.2 電漿輔助化學氣相沉積原理 14 2.1.3 薄膜成長 15 2.2化學機械研磨製程(Chemical Mechanical Polishing,CMP) 18 2.2.1製程介紹 20 2.2.2 CMP終端點偵測 22 第 3 章 研究理論背景 25 3.1 逐批控制(Run to Run control , RtR) 25 3.2 Single EWMA 回饋控制器 28 3.3 逐步迴歸分析(Stepwise Regression analyzer) 30 3.4 主值分析法(Principle component analysis , PCA) 33 3.5 共變異數分析(Analysis of Covariance,ANCOVA) 36 3.6時間數列(Time Series) 38 3.7虛擬量測系統(Virtual Metrology,VM) 41 第 4 章 分析系統量測時間延遲對控制之影響 45 4.1 EWMA閉迴路系統方程式分析 45 4.1.1 System Equation 45 4.2 控制器性能分析及調整 48 4.2.1 Bias Correction 48 4.2.2 Time-correlated noise reduction 53 4.3 虛擬量測系統的應用 58 4.4 不規律的延遲(Variable delay) 60 4.5 鎢的化學氣相沉析製程 64 第 5 章 利用VM來解決CVD量測上之問題 68 5.1 PECVD系統變數之設定 68 5.2 虛擬量測系統模型之建立 69 5.2.1 Stepwise Regression 建模 70 5.2.2 PCA 建模 72 5.2.3 PCA + Stepwise Regression 建模 74 5.3 建模之結果分析 75 第 6 章 混合產品之解決方法 77 6.1製程分析與預測模型之建立 78 6.1.1資料前處理 78 6.1.2系統分析與預測模型之建立 79 6.2控制策略之調整 83 6.2.1 控制策略調整後之結果比較 85 6.3 使用ANCOVA_EWMA控制 89 6.3綜合結果 92 第 7 章 總 結 94 第 8 章 參考文獻 96 變數對照表 100 Appendix 103

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