本論文中，我們研究了兩種高介電係數材料作為閘極介電層元件的特性及其可靠性。
在Si3N4元件方面，我們利用兩階段快速熱氧化閘氮化矽層的方式製備電晶體元件來探討元件的初始特性及可靠度分析，並且藉由光罩設計來探討電漿蝕刻時對元件所引發傷害之影響。氮化矽層在經過850℃，15秒作為第一階段快速熱處理後，再以800℃，15秒作為第二階段熱氧化處理之元件，在電晶體之最大轉導退化、臨界電壓漂移量及電漿充電傷害皆可有效地改善。

在Ta2O5元件方面，我們嘗試不同的沈積前表面氮化處理溫度及沈積後退火處理（PDA）的方式製備電容元件來探討元件的初始特性及可靠性。我們發現沈積前表面氮化處理溫度為900℃，20秒搭配沈積後O2 Plasma退火處理的元件，其漏電流特性、崩潰電場可靠性、SILC的可靠性皆有所提升。

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