過去十年元件製造商已經證實碳化矽寬能隙材料可以為下一代功率半導體元件的發展帶來多重優勢。而目前因為碳化矽高硬度高脆性的關係使加工困難，造成價格昂貴而無法商業化。本文希望藉由高速磨削可以解決碳化矽難削材加工困難的問題，並且以磨粒軌跡為切入點分析高速磨削與傳統磨削的差異，建立高速磨削的幾何切屑構形理論，由此理論說明高速磨削適用於難削材加工之原因。最終以實驗驗證理論的正確性並且發現不同實驗參數與加工條件下，高速磨削有助於提升對於難削材的加工效率或增進表面完整性。

In recent year, the manufacturer of electronic devices has confirmed that Wide Bandgap materials such as Silicon Carbide can bring many advantages to the development of Power Semiconductor Devices. However, Silicon Carbide with the high hardness and strength are difficult-to-cut materials in the machining process. By analyzing the high speed grinding abrasive trajectory, we investigate the difference between high speed grinding and conventional grinding. We also established the model of chip formation on high speed grinding and find the reason why high speed grinding is suitable for processing silicon carbide. Finally, these experiments verify the chip formation proposed, also the result shows that high speed grinding with various experiment parameters and processing conditions can enhance the grinding efficiency as well as improve the surface integrity.

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