電阻式記憶體在最近是十分熱門的非揮發性記憶體的研究，主要的原因是來自於結構簡單、低操作電壓、適合利用於元件尺寸微縮、寫入速度快並且容易整合在當今的CMOS技術上等優點。
電阻式記憶體有許多種應用，像是高密度的記憶體陣列或是整合於邏輯元件的1 transistor + 1 RRAM(1T1R)結構，其中最引人注目的就是電阻式記憶體可以利用cross-bar array的方式來進行高密度的堆疊。而進行cross-bar array的時候必需要克服的問題就是寄生電流(sneak current)的抑制，目前廣為人知的方發大致上可分為1S1R、1D1R、及互補電阻切換記憶體等方法。為了整合的便利性、及結構的簡單性於是選擇的討論方向是以Schottky diode來完成1D1R的結構，以增加電阻式記憶體的陣列數。而經過嘗試過後使用ZrTiOx(ZTO)為介電層，製作出結構為TaN/ZTO/Ni/N-Si為目前最適合的方法，利用這種結構可以使陣列數在100的時候還可以維持10%判讀的讀取區間。因此對於結構簡單的電阻式記憶體陣列上面，顯示出TaN/ZTO/Ni/N-Si是有極大的潛力。

Resistive random access memory(RRAM) is the hottest topic of nonvolatile memory studies. The advantages of RRAM are simple structure, fast switching speed, low voltage operation, easy for CMOS integration.
There are many applications of RRAM like cross-bar array for high density of cells or integrated with logic cells with the structure of 1 transistor + 1 RRAM(1T1R). The cross-bar array is the excellent idea to accomplish high density of memory cells array. But sneak current from cross-bar array must be avoided. There are some ways to avoid sneak current are known as 1 Selection device + 1 RRAM(1S1R), 1 diode + 1 RRAM(1D1R) or complementary resistive switching memory. The schottky diode of 1D1R cross-bar array are chosen with high integrating power with RRAM and simple structure. Finally, the ZrTiOx(ZTO) were used to be dielectric and the structure of TaN/ZTO/Ni/N-Si could have 10% of read windows with 100 word line or bit line number. For simple structure TaN/ZTO/Ni/N-Si is potential for RRAM array.

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