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研究生： 丁懿萍
I-ping Ting
論文名稱： 水平式硬碟片中底層摻雜對晶粒細化之影響
指導教授： 賴志煌
Chi-huang Lai
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2001
畢業學年度： 89
語文別： 中文
論文頁數： 70
中文關鍵詞： 磁紀錄媒體 、濺鍍 、晶粒細化
外文關鍵詞： magnetic recording media
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    • 本文主旨在探討利用在底層(underlayer)摻雜雜質元素來提昇磁性層矯頑場及使晶粒細化的可能性。實驗中選擇Mn、Nb、Ag、Zr、Al等五種元素作為雜質元素，利用共濺鍍的方式，添加入Cr80Mo20的底層，然後觀察元素摻雜後的織構改變之情形、及晶粒大小變化之情形。實驗結果發現Mn、Nb、Ag、Zr四種元素，在少量摻雜時都有強化Cr(200)及Co( )織構的傾向，在摻雜量分別為Mn 20%、Nb 8%、Ag 5%、Zr2%時，我們得到最佳的織構；同時晶粒也由未摻雜時的164Å明顯縮小為104~122 Å，然而或許是由於晶粒細化的影響，矯頑場普遍有下降之趨勢。其中又以Zr的晶粒細化效果最明顯，僅添加5%，晶粒縮小為未摻雜時的30%，且矯頑場並無明顯變化。

    In this thesis we investigate the possibility of reducing the grain size of magnetic layer by doping impurity in the underlayer of magnetic recording media. Mn, Nb, Ag, Zr, Al were chosen as doping elements. Each element was added in the Cr80Mo20 underlayer by co-sputtering, and the grain size and texture variation were observed. In the samples of Mn-, Nb-, Ag-, and Zr-doped series, we found that a small doping proportion would enhance the texture of Cr(200) and Co( ). The optimized doping proportions for best texture were 20% for Mn, 8% for Nb, 5% for Ag, and 2% for Zr. Alougth the grain size was reduced by doping, the coercivity all droped perhaps due to fine grain size. Among the foregoing four series, Zr has the best performance, with which a light doping proportion of 5% can create an average grain size of 115 Å, 30% smaller than that of an undoped sample, and the coercivity still remains the same.

    目錄 中文摘要…………………………………………………………….…… I 英文摘要..…………………………………….……………………..…… II 誌謝………………………………………………………………..……... III 目錄……………………………………………………………………… IV 圖目錄………………………………………………………………….. VII 表目錄………………………………………………………………….. X 第一章 研究動機……………………………………………….…….…1 第二章 實驗原理與文獻回顧………………………………….…….…2 2-1 磁記錄原理…………………………………………….…..….. 2 2-1.1 寫入機制…………………………………………...….………. 2 2-1.2 讀取機制…………………………………….……….. 4 2-1.3 磁矩轉換區………………………………….……….. 6 2-1.4 雜訊的成因………………………………….……….. 8 2-1.5 晶粒間的交互耦合作用…………………….………...9 2-2 水平式硬碟片的物理極限………………………….………...12 2-3 材料與製程……………………………….……….…………..14 2-3.1 提升矯頑場…………………………………….…….14 2-3.2 晶粒細化……………………………………….…….17 2-3.3 中間層的添加…………...………………….…..…....18 第三章 實驗與分析儀器………………………………….…..……….19 3-1 製程設備 (五靶濺鍍系統)……………………….…….…….19 3-2 樣品振盪磁測儀………………………………………………23 3-3 X光薄膜分析技術……………………………………………24 3-3.1 θ/2θ scan……………………………..…………..24 3-3.2 Grazing Incident X-ray Diffraction, GID………..….25 3-4 穿透式電子顯微鏡……………………………………………27 3-4.1 電子束與樣品作用…………………………..……..27 3-4.2 電子顯微鏡系統……………………………………30 3-4.3 X光能量分散光譜儀(EDS)………………..………32 第四章 實驗方法………………………………………………………34 4-1 基板的準備……………………………..…………..34 4-2 薄膜成長……………………………………………34 4-3 分析量測……………………………………………36 第五章 實驗結果與討論………………………………………………37 5-1 製程參數對於磁性質的影響…………………………………37 5-1.1 製程溫度………………..………….……………….37 5-1.2 工作壓力………………………..…………………..39 5-1.3 鍍膜功率…………..………………………………..40 5-1.4 鍍膜功率……………………………….…………. 41 5-1.5 製程條件最佳化…………………….……………..43 5-2 在CrMo底層摻雜元素對碟片性質之影響……..…………..47 5-2.1 Mn元素的摻雜……………….………..………….47 5-2.2 Nb元素的摻雜……….……………………………51 5-2.3 Ag元素的摻雜…………………………………….54 5-2.4 Zr元素的摻雜……….…………….………………57 5-2.5 Al元素的摻雜……………………………………..60 第六章 結論……………………………...…………………………….63 參考文獻……………………………………………….……………….65

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